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机构 日期 题名 作者
國立交通大學 2019-04-02T05:58:38Z Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:26Z Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:14Z Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:11Z Hydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructure Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:00Z Second Phase and Defect Formation in Bi0.5Na0.5-xKxTiO3 Ceramics Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn
國立交通大學 2019-04-02T05:57:58Z Flexible solid-like electrolytes with ultrahigh conductivity and their applications in all-solid-state supercapacitors Yang, Chih-Chieh; Lin, Hao-Yang; Kumar, Amit; Pattanayak, Bhaskar; Tsai, Hung-Yi; Winie, Tan; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:57:56Z Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories Lee, Dai-Ying; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:57:53Z High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:57:52Z Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:57:09Z Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance Borland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John

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