|
|
???tair.name??? >
???browser.page.title.author???
|
"tseng tseung yuen"???jsp.browse.items-by-author.description???
Showing items 86-110 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
| 國立交通大學 |
2018-08-21T05:54:10Z |
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
|
Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2018-08-21T05:54:05Z |
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:14Z |
An ultra-compact blackbody using electrophoretic deposited carbon nanotube films
|
Lin, Albert; Yang, Chien-Chih; Parashar, Parag; Lin, Chien-Yung; Jian, Ding Rung; Huang, Wei-Ming; Huang, Yi-Wen; Fu, Sze Ming; Zhong, Yan Kai; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:53:11Z |
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
|
Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:53:08Z |
Facile synthesis of mesoporous NiFe2O4/CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors
|
Kumar, Nagesh; Kumar, Amit; Huang, Guan-Min; Wu, Wen-Wei; Tseng, Tseung Yuen |
| 國立交通大學 |
2018-08-21T05:52:56Z |
Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer
|
Lin, Yu-Hsuan; Huang, Ding-Chiuan; Lou, Jen-Chung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:55Z |
Dynamic observation of reversible lithium storage phenomena in hybrid supercapacitor devices
|
Huang, Guan-Min; Tsai, Tsung-Chun; Huang, Chun-Wei; Kumar, Nagesh; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
|
Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:31Z |
高導電度膠態電解液於固態超級電容之應用
|
林皓陽; 曾俊元; Lin, Hao-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
金屬氧化物選擇器搭配氧化鋯電阻式記憶體之特性研究
|
李承鴻; 曾俊元; Lee, Cheng-Hung; Tseng,Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
氧化層雙向選擇器於電阻式記憶體之應用
|
楊敦智; 曾俊元; Yang, Tun-Chih; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:40:30Z |
單層氧化鎂選擇器應用於電阻式記憶體之研究
|
鄔晏澤; 曾俊元; Wu, Yan-ze; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:30Z |
納米電阻式記憶體導體特點的分析方法
|
白達磊; 曾俊元; berco, dan; Tseng,Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:03Z |
藉由電極調整及摻雜提升氧化鋅透明性電阻式記憶體電阻轉態特性
|
費玉滿; 曾俊元; 韋光華; FIRMAN, MANGASA SIMANJUNTAK; Tseng, Tseung-Yuen; Wei, Kung-Hwa |
| 國立交通大學 |
2018-01-24T07:37:07Z |
前瞻式金氧半場效電晶體之隨機電報訊號分析與熱載子劣化研究
|
陳慶恩; 曾俊元; 張鼎張; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2018-01-24T07:37:01Z |
利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究
|
戴光駿; 曾俊元; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
二氧化鉿金屬橋樑電阻式記憶體之可靠度研究
|
黃楚傑; 曾俊元; Huang, Chu-Jie; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
以電泳法沉積奈米碳管的電阻式記憶體之轉態特性研究
|
林千詠; 曾俊元; Lin, Chien-Yung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
三維多孔石墨烯/鎳鈷氧化物複合電極材料於 超級電容器之應用
|
李佳鴻; 曾俊元; Lee, Chia-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
|
Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:33Z |
Facile production of graphene nanosheets comprising nitrogen-doping through in situ cathodic plasma formation during electrochemical exfoliation
|
Yen, Po-Jen; Ting, Chao-Chi; Chiu, Yung-Chi; Tseng, Tseung-Yuen; Hsu, Yao-Jane; Wu, Wen-Wei; Wei, Kung-Hwa |
Showing items 86-110 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
|
