| 國立交通大學 |
2014-12-08T15:46:52Z |
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films
|
Lee, CJ; Huang, LT; Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:51Z |
Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - A review
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:46Z |
Short-duration rapid-thermal-annealing processing of tantalum oxide thin films
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:41Z |
Electrical properties of Ta2O5 thin films deposited on Ta
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Ba(Ti0.8Sn0.2)O-3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications
|
Kuo, YF; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:39Z |
Promotion of phase transformation and single-phase formation in silver-doped Tl-Ba-Ca-Cu-O superconducting thin films
|
Koo, HS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:32Z |
Analysis of AC electrical response for radio-frequency sputtered (Ba0.5Sr0.5)TiO3 thin film
|
Wang, YP; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Mixing macro and micro flowtime estimation model: wafer fab example
|
Tseng, TY; Ho, TF; Li, RK |
| 國立交通大學 |
2014-12-08T15:46:14Z |
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:13Z |
Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
|
Tsai, MS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Preparation of aluminum film on phosphor screen for field emission display
|
Fran, YS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:04Z |
Structure-related optical properties of rapid thermally annealed Ba0.7Sr0.3TiO3 thin films
|
Kuo, YF; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:45:43Z |
Electrical properties of Ta2O5 thin films deposited on Cu
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:45:40Z |
Effects of A/B cation ratio on the microstructure and lifetime of (Ba1-xCax)(z)(Ti0.99-y ZryMn0.01)O-3 (BCTZM) sintered in reducing atmosphere
|
Lee, WH; Tseng, TY; Hennings, D |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
|
Tsai, MS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:45:16Z |
Dielectric relaxation and defect analysis of Ta2O5 thin films
|
Ezhilvalavan, S; Tsai, MS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Surface modification of Dy2O3-Nb2O5 dope mix for dielectric materials in aqueous dispersion
|
Lee, WH; Tseng, TY; Hennings, D |
| 國立交通大學 |
2014-12-08T15:45:13Z |
Effects of calcination temperature and A/B ratio on the dielectric properties of (Ba,Ca)(Ti,Zr,Mn)O-3 for multilayer ceramic capacitors with nickel electrodes
|
Lee, WH; Tseng, TY; Hennings, DFK |
| 國立交通大學 |
2014-12-08T15:45:13Z |
Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
|
Chen, WK; Cheng, CM; Huang, JY; Hsieh, WF; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Sintering BaTi4O9/Ba2Ti9O20-based ceramics by glass addition
|
Cheng, CM; Yang, CF; Lo, SH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:44:55Z |
The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films
|
Tsai, MS; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:44:55Z |
Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
|
Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:44:20Z |
Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
|
Nayak, M; Lee, SY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:44:16Z |
Effects of ceramic processing parameters on the microstructure and dielectric properties of (Ba1-xCax)(Ti0.99-y, ZryMn0.01)O-3 sintered in a reducing atmosphere
|
Lee, WH; Tseng, TY; Hennings, D |
| 國立交通大學 |
2014-12-08T15:43:55Z |
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
|
Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:36Z |
Thermal-treatment induced deep electron traps in AlInP
|
Sung, WJ; Huang, KF; Lin, WJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:43:30Z |
Gamma-ray induced deep electron traps in GaInP
|
Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; Wu, YR |
| 國立交通大學 |
2014-12-08T15:43:15Z |
Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films
|
Lue, HT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Deep hole traps created by gamma-ray irradiation of GaInP
|
Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: I. Applications of interconnect optimization design
|
Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Generalized interconnect delay time and crosstalk models: II. Crosstalk-induced delay time deterioration and worst crosstalk models
|
Lee, TGY; Tseng, TY; Wong, SC; Yang, CJ; Liang, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
|
Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:49Z |
A model of non-homogeneous damped electromagnetic wave and heat equation in ferrite materials
|
Tung, MJ; Chen, R; Hsu, CH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:39Z |
Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate
|
Lee, SY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:31Z |
Dielectric tunability of barium strontium titanate films prepared by a sol-gel method
|
Nayak, M; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:30Z |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
|
Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:42:23Z |
Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates
|
Wang, YK; Tseng, TY; Lin, P |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Microwave penetration depth measurement for high T-c superconductors by dielectric resonators
|
Lue, HT; Lue, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
|
Sung, WJ; Huang, KF; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:13Z |
Characterization of porous silicate for ultra-low k dielectric application
|
Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
|
Kuo, SY; Chen, CS; Tseng, TY; Chang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:42:00Z |
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
|
Lue, HT; Liu, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
|
Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
|
Liu, CY; Lue, HT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:36Z |
Variation of electrical properties of Sro(0.8)Bi(2+x)Ta(2)O(9+delta) ferroelectric thin films with bismuth content
|
Chou, HY; Tseng, TY; Chen, TM |
| 國立交通大學 |
2014-12-08T15:41:31Z |
Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
|
Li, SY; Lee, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:26Z |
Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
|
Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:24Z |
Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide-alkoxide precursor-based sol-gel method
|
Nayak, M; Lee, SY; Tseng, TY |
