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Showing items 76-85 of 245 (25 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:30Z |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
|
Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:42:23Z |
Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates
|
Wang, YK; Tseng, TY; Lin, P |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Microwave penetration depth measurement for high T-c superconductors by dielectric resonators
|
Lue, HT; Lue, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
|
Sung, WJ; Huang, KF; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:13Z |
Characterization of porous silicate for ultra-low k dielectric application
|
Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
|
Kuo, SY; Chen, CS; Tseng, TY; Chang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:42:00Z |
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
|
Lue, HT; Liu, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
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Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
Showing items 76-85 of 245 (25 Page(s) Totally)
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