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Showing items 81-90 of 245 (25 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:03Z |
Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
|
Kuo, SY; Chen, CS; Tseng, TY; Chang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:42:00Z |
An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
|
Lue, HT; Liu, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
|
Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
|
Liu, CY; Lue, HT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:36Z |
Variation of electrical properties of Sro(0.8)Bi(2+x)Ta(2)O(9+delta) ferroelectric thin films with bismuth content
|
Chou, HY; Tseng, TY; Chen, TM |
| 國立交通大學 |
2014-12-08T15:41:31Z |
Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
|
Li, SY; Lee, CY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:26Z |
Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
|
Lue, HT; Wu, CJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:24Z |
Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide-alkoxide precursor-based sol-gel method
|
Nayak, M; Lee, SY; Tseng, TY |
Showing items 81-90 of 245 (25 Page(s) Totally)
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