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Showing items 26-35 of 41 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:46:06Z |
Effects of film stress on the chemical mechanical polishing process
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Tseng, WT; Wang, YH; Chin, JH |
| 國立交通大學 |
2014-12-08T15:35:42Z |
Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface
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Chang, JJ; Hsieh, TE; Wang, YL; Tseng, WT; Liu, CP; Lan, CY |
| 國立交通大學 |
2014-12-08T15:27:24Z |
Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS; Chang, YF |
| 國立交通大學 |
2014-12-08T15:27:17Z |
ULSI multi-layer thin film passivation processes for improving cache memory performance
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Lin, CF; Tseng, WT; Feng, MS; Chang, YF; Hsu, JJ |
| 國立交通大學 |
2014-12-08T15:02:52Z |
Modeling of the wear mechanism during chemical-mechanical polishing
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Liu, CW; Dai, BT; Tseng, WT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:11Z |
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
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Tseng, WT; Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:02Z |
Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
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Tseng, WT; Wang, YL |
| 國立交通大學 |
2014-12-08T15:02:01Z |
CMP of fluorinated silicon dioxide: Is it necessary and feasible?
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Tseng, WT; Hsieh, YT; Lin, CF |
| 國立交通大學 |
2014-12-08T15:01:58Z |
Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
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Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS |
Showing items 26-35 of 41 (5 Page(s) Totally)
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