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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立成功大學 2016-10 Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory Shih, Chih-Cheng; Chen, Wen-Jen; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Tseng, Yi-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M.
國立成功大學 2016-08-15 Integrated microfluidic system for rapid detection of influenza H1N1 virus using a sandwich-based aptamer assay Tseng, Yi-Ting;Wang, Chih-Hung;Chang, Chih-Peng;Lee, Gwo-Bin
國立成功大學 2016-06 Complementary resistive switching behavior for conductive bridge random access memory Zheng, Hao-Xuan; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Chen, Kai-Huang; Wang, Ming-Hui; Zheng, Jin-Cheng; Lo, Ikai; Wu, Cheng-Hsien; Tseng, Yi-Ting; Sze, Simon M.
國立成功大學 2016-04 Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M.
國立交通大學 2015-07-21T08:28:10Z Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2015-07-21T08:28:09Z Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory Lin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M.
國立成功大學 2015-06 Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M.
國立成功大學 2015-06 Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory Lin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M.
國立成功大學 2015-05-25 Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory Tseng, Yi-Ting; Tsai, Tsung-Ming; Chang, Ting-Chang; Shih, Chih-Cheng; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Li, Yu-Chiuan; Lin, Chih-Yang; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M.
國立臺灣大學 2015 將雜訊整形概念運用於連續逼近暫存量化器之三角積分調變器 曾意婷; Tseng, Yi-Ting

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