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Institution Date Title Author
國立交通大學 2019-04-02T05:58:17Z RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra
國立交通大學 2014-12-12T03:06:01Z 應用於高頻低雜訊具有砷化銦鎵/砷化銦 超晶格通道之變質型高速電子遷移率電晶體(MHEMT)之研究 曾文仲; Tsern Wen Chung; 張翼; Edward Yi Chung
國立交通大學 2014-12-08T15:19:01Z A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications Kuo, Chien-I; Hsu, Heng-Tung; Lu, Jung-Chi; Chang, Edward Yi; Wu, Chien-Ying; Miyamoto, Yasuyuki; Tsern, Wen-Chung
國立交通大學 2014-12-08T15:10:58Z InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung
國立交通大學 2014-12-08T15:06:39Z RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra

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