臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
臺大學術典藏	2022-04-25T06:41:33Z	Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation	Chen W.-J;Tsou Y.-J;Shih H.-C;Liu P.-C;Liu C.W.; Chen W.-J; Tsou Y.-J; Shih H.-C; Liu P.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2022-04-25T06:41:31Z	Thermally Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching	Tsou Y.-J;Chen W.-J;Shih H.-C;Liu P.-C;Liu C.W;Li K.-S;Shieh J.-M;Yen Y.-S;Lai C.-H;Wei J.-H;Tang D.D;Sun J.Y.-C.; Tsou Y.-J; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:04:02Z	Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method	Tsou Y.-J;Chiu J.-C;Shih H.-C;Liu C.W.; Tsou Y.-J; Chiu J.-C; Shih H.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:02Z	Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method	Tsou Y.-J;Chiu J.-C;Shih H.-C;Liu C.W.; Tsou Y.-J; Chiu J.-C; Shih H.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:55Z	High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness	Huang Y.-S;Tsou Y.-J;Huang C.-H;Huang C.-H;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:54Z	First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching	Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching	Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU
國立成功大學	2020	Hydrophobic Copper Catalysts Derived from Copper Phyllosilicates in the Hydrogenation of Levulinic Acid to γ-Valerolactone	Tsou, Y.-J.;To, To T.D.;Chiang, Y.-C.;Lee, J.-F.;Kumar, R.;Chung, P.-W.;Lin, Y.-C.

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