| 國立交通大學 |
2014-12-08T15:25:08Z |
Impact of back gate bias on hot-carrier effects of n-channel tri-gate FETs (TGFETs)
|
Lin, Chia-Pin; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)
|
Tsui, Bing-Yue; Weng, Chien-Li; Chang, Chih-Lien; Wei, Jeng-Hua; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:24:27Z |
High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric
|
Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
|
Tsui, Bing-Yue; Li, Po-Hsueh; Yen, Chih-Chan |
| 國立交通大學 |
2014-12-08T15:16:48Z |
Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction
|
Lin, Chia-Pin; Tsui, Bing-Yue; Hsieh, Chih-Ming; Huang, Chih-Feng |
| 國立交通大學 |
2014-12-08T15:16:19Z |
Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
|
Huang, Chih-Feng; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
|
Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:15:16Z |
Process and characteristics of fully silicided source/drain (FSD) thin-film transistors
|
Lin, Chia-Pin; Hsiao, Yi-Hsuan; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:13:52Z |
Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
|
Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:13:40Z |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:12:58Z |
Multi-gate non-volatile memories with nanowires as charge storage material
|
Tsui, Bing-Yue; Wang, Pei-Yu; Chen, Ting-Yeh; Cheng, Jung-Chien |
| 國立交通大學 |
2014-12-08T15:12:38Z |
Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devices
|
Huang, Chih-Feng; Tsui, Bing-Yue; Lu, Chih-Hsun |
| 國立交通大學 |
2014-12-08T15:12:03Z |
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO(2) Gate Dielectric
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:11:40Z |
Effects of EUV Irradiation on Poly-Si SONOS NVM Devices
|
Tsui, Bing-Yue; Yen, Chih-Chan; Li, Po-Hsueh; Lai, Jui-Yao |
| 國立交通大學 |
2014-12-08T15:11:25Z |
Two-dimensional carrier profiling by Kelvin-probe force Microscopy
|
Tsui, Bing-Yue; Hsieh, Chih-Ming; Su, Po-Chih; Tzeng, Shien-Der; Gwo, Shangjr |
| 國立交通大學 |
2014-12-08T15:11:01Z |
Method for extracting gate-voltage-dependent source injection resistance of modified Schottky barrier (MSB) MOSFETs
|
Tsui, Bing-Yue; Lu, Chi-Pei; Liu, Hsiao-Han |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode
|
Lu, Chi-Pei; Tsui, Bing-Yue; Luo, Cheng-Kei; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:09:56Z |
Ta-Pt Alloys as Gate Materials for Metal-Oxide-Semiconductor Field Effect Transistor Application
|
Huang, Chih-Feng; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:07:50Z |
Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation
|
Tsui, Bing-Yue; Hsieh, Chih-Ming; Hung, Yu-Ren; Yang, York; Shen, Ryan; Cheng, Sam; Lin, Tony |
| 國立交通大學 |
2014-12-08T15:07:45Z |
Current transport mechanisms of Schottky barrier and modified schottky barrier MOSFETs
|
Tsui, Bing-Yue; Lu, Chi-Pei |
| 國立交通大學 |
2014-12-08T15:07:42Z |
Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation
|
Tsui, Bing-Yue; Lee, Chen-Ming |
| 國立交通大學 |
2014-12-08T15:07:38Z |
The impact of high-voltage drift n-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs
|
Huang, C. T.; Tsui, Bing-Yue; Liu, Hsu-Ju; Lin, Geeng-Lih |
| 國立交通大學 |
2014-12-08T15:06:39Z |
A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH(3) Plasma Treatment
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立成功大學 |
2005 |
Optimization of back side cleaning process to eliminate copper contamination
|
Chou, Wei-Yang; Tsui, Bing-Yue; Kuo, Chia-Wei; Kang, Tsung-Kuei |
| 國立成功大學 |
2004-05 |
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
|
Lan, Yung-Chiang; Lee, Chun-Tao; Hu, Yuan; Chen, Shih-Hung; Lee, Cheng-Chung; Tsui, Bing-Yue; Lin, Tsang-Lang |
