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Showing items 16-25 of 150  (15 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2018-08-21T05:56:52Z Scaling of Gate Dielectric on Ge Substrate Chan, Yung-Hsiang; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:56:34Z Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chen, Chih-Ping; Chang, Kuo-Ping; Shih, Yen-Hao; Tsui, Bing-Yue; Lu, Chih-Yuan
國立交通大學 2018-08-21T05:54:27Z Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction Chen, Yi-Ju; Tsui, Bing-Yue; Chou, Hung-Ju; Li, Ching-I; Lin, Ger-Pin; Hu, Shao-Yu
國立交通大學 2018-08-21T05:54:09Z Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC Tsui, Bing-Yue; Cheng, Jung-Chien; Yen, Cheng-Tyng; Lee, Chawn-Ying
國立交通大學 2018-08-21T05:54:04Z Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation Tseng, Yuan-Hung; Lin, Chung-Yu; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:53:52Z Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETs Chen, Yi-Ju; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:53:02Z Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing Cheng, Jung-Chien; Tsui, Bing-Yue
國立交通大學 2018-01-24T07:42:47Z 以二氧化鋯作為閘極介電層之鍺金屬-氧化層-半導體電容器與N型金屬-氧化層-半導體電晶體之閘極工程研究 詹詠翔; 崔秉鉞; Chan, Yung-Hsiang; Tsui, Bing-Yue
國立交通大學 2018-01-24T07:42:25Z 熱製程對鍺金屬絕緣層半導體元件上閘極介電質品質影響之研究 危爾捷; 崔秉鉞; 吳品鈞; Wei, Erh-Jye; Tsui, Bing-Yue; Wu, Pin-Jiun
國立交通大學 2018-01-24T07:39:09Z 4H型碳化矽溝槽式閘極金氧半場效功率電晶體之關鍵製程研究 曾元宏; 崔秉鉞; Tseng, Yuan-Hung; Tsui, Bing-Yue

Showing items 16-25 of 150  (15 Page(s) Totally)
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