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"tsui bing yue"的相关文件
显示项目 31-40 / 150 (共15页)
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| 國立交通大學 |
2017-04-21T06:56:49Z |
Investigation Into Gate-to-Source Capacitance Induced by Highly Efficient Band-to-Band Tunneling in p-Channel Ge Epitaxial Tunnel Layer Tunnel FET
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:56:33Z |
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
|
Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying |
| 國立交通大學 |
2017-04-21T06:55:57Z |
Trenched 4H-SiC with tapered sidewall formed by Cl-2/O-2 reactive ion etching
|
Tseng, Yuan-Hung; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:55:47Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:50:15Z |
Simulation of Grain-Boundary Traps Effect for 3D Vertical Gate NAND Flash Memory Cell : From Structure Geometry to Trap Description
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:49:47Z |
A Comparison Study on the Al-based Interfacial Layers for Ge MIS Devices
|
Yang, Yi-Gin; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:49:38Z |
A Reliable Schottky Barrier Height Extraction Procedure
|
Tsui, Bing-Yue; Fu, Tze-Yu |
| 國立交通大學 |
2017-04-21T06:49:06Z |
Effect of Formation Temperature on Quality of Gate Dielectric on Germanium Substrate
|
Wei, Erh-Jye; Tsui, Bing-Yue; Wu, Pin-Jiun |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact
|
Chen, Yi-Ju; Chou, Hung-Ju; Li, Ching-I; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:48:34Z |
Evaluation of Electrical Performance of Various Tunnel TFETs
|
Huang, Chi; Hung, Tao-Yi; Wang, Pei-Yu; Tsui, Bing-Yue |
显示项目 31-40 / 150 (共15页)
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