| 國立交通大學 |
2020-10-05T02:01:56Z |
Well-behaved Ge n(+)/p shallow junction achieved by plasma immersion ion implantation
|
Chen, Yi-Ju; Liao, Hsiu-Hsien; Tsui, Bing-Yue; Lee, Yao-Jen; Wang, Chih-Jen; Sung, Po-Jung |
| 國立交通大學 |
2020-10-05T02:00:30Z |
Failure Analysis on TiAl Metallization Process for Ohmic Contact on 4H-SiC pMOSFET
|
Hung, Chia-Lung; Cheng, Jung-Chien; Tsui, Bing-Yue |
| 國立交通大學 |
2020-10-05T01:59:47Z |
Reduction of Contact Resistivity by Nano-Textured Contact
|
Tsui, Bing-Yue; Lee, Ya-Hsin; Lee, Chen-Yi |
| 國立交通大學 |
2020-05-05T00:02:21Z |
Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer
|
Chen, Yi-Ju; Liao, Hsiu-Hsien; Tsui, Bing-Yue |
| 國立交通大學 |
2020-05-05T00:01:32Z |
Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
|
Lin, Sheng-Di; Hsiao, Bo-Jen; Tsui, Bing-Yue; Hsieh, Chin-An; Tsai, Chia-Ming |
| 國立交通大學 |
2020-04-01 |
Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application
|
Tsui, Bing-Yue; Hung, Chia-Lung |
| 國立交通大學 |
2020-02-02T23:55:33Z |
Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
|
Liao, Hsiu-Hsien; Chen, Yi-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T06:00:30Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked Dielectric
|
Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2019-04-02T05:59:58Z |
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
|
Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying |
| 國立交通大學 |
2019-04-02T05:59:52Z |
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment
|
Tsui, Bing-Yue; Cheng, Jung-Chien |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts
|
Cheng, Jung-Chien; Tsui, Bing-Yue |
| 國立交通大學 |
2019-04-02T05:58:10Z |
A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH3 Plasma Treatment
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET
|
Lin, Po-Shao; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
|
Chen, Yi-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:56:52Z |
Scaling of Gate Dielectric on Ge Substrate
|
Chan, Yung-Hsiang; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device
|
Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chen, Chih-Ping; Chang, Kuo-Ping; Shih, Yen-Hao; Tsui, Bing-Yue; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:27Z |
Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction
|
Chen, Yi-Ju; Tsui, Bing-Yue; Chou, Hung-Ju; Li, Ching-I; Lin, Ger-Pin; Hu, Shao-Yu |
| 國立交通大學 |
2018-08-21T05:54:09Z |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
|
Tsui, Bing-Yue; Cheng, Jung-Chien; Yen, Cheng-Tyng; Lee, Chawn-Ying |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation
|
Tseng, Yuan-Hung; Lin, Chung-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:53:52Z |
Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETs
|
Chen, Yi-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing
|
Cheng, Jung-Chien; Tsui, Bing-Yue |
| 國立交通大學 |
2018-01-24T07:42:47Z |
以二氧化鋯作為閘極介電層之鍺金屬-氧化層-半導體電容器與N型金屬-氧化層-半導體電晶體之閘極工程研究
|
詹詠翔; 崔秉鉞; Chan, Yung-Hsiang; Tsui, Bing-Yue |
| 國立交通大學 |
2018-01-24T07:42:25Z |
熱製程對鍺金屬絕緣層半導體元件上閘極介電質品質影響之研究
|
危爾捷; 崔秉鉞; 吳品鈞; Wei, Erh-Jye; Tsui, Bing-Yue; Wu, Pin-Jiun |
| 國立交通大學 |
2018-01-24T07:39:09Z |
4H型碳化矽溝槽式閘極金氧半場效功率電晶體之關鍵製程研究
|
曾元宏; 崔秉鉞; Tseng, Yuan-Hung; Tsui, Bing-Yue |
