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机构 日期 题名 作者
國立交通大學 2019-04-02T05:58:59Z Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment Tsui, Bing-Yue; Cheng, Jung-Chien
國立交通大學 2019-04-02T05:58:38Z Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts Cheng, Jung-Chien; Tsui, Bing-Yue
國立交通大學 2019-04-02T05:58:10Z A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With NH3 Plasma Treatment Lee, Chen-Ming; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:57:09Z A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET Lin, Po-Shao; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:57:09Z Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge Chen, Yi-Ju; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:56:52Z Scaling of Gate Dielectric on Ge Substrate Chan, Yung-Hsiang; Tsui, Bing-Yue
國立交通大學 2018-08-21T05:56:34Z Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chen, Chih-Ping; Chang, Kuo-Ping; Shih, Yen-Hao; Tsui, Bing-Yue; Lu, Chih-Yuan
國立交通大學 2018-08-21T05:54:27Z Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction Chen, Yi-Ju; Tsui, Bing-Yue; Chou, Hung-Ju; Li, Ching-I; Lin, Ger-Pin; Hu, Shao-Yu
國立交通大學 2018-08-21T05:54:09Z Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC Tsui, Bing-Yue; Cheng, Jung-Chien; Yen, Cheng-Tyng; Lee, Chawn-Ying
國立交通大學 2018-08-21T05:54:04Z Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation Tseng, Yuan-Hung; Lin, Chung-Yu; Tsui, Bing-Yue

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