| 國立交通大學 |
2014-12-12T01:37:14Z |
碳離子佈植對鎳化矽熱穩定性與碳化矽形成影響之研究
|
羅子歆; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:07Z |
極紫外光輻射對於高介電常數介質之影響研究
|
李勃學; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:06Z |
以奈米壓印技術製作大面積次微米孔洞陣列
|
周智超; Chou, Chih-Chao; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:32:22Z |
奈米碳管接觸阻抗與電場效應研究
|
張志廉; Chang, Chih Lien; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:27:07Z |
氧化鋁/二氧化鉿交錯層應用於非揮發性記憶體特性研究
|
蔡依成; Tsai, Yi-Cheng; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
非揮發性記憶體的儲存電荷的空間分佈對元件特性的影響
|
余昆武; Yu, Kun-Wu; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
奈米碳管記憶體之電荷儲存效應研究
|
王俊凱; Wang, Chun-Kai; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
修正蕭基位障非揮發性記憶體於薄膜電晶體基板之研究
|
賴瑞堯; Lai, Jui-Yao; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:23:18Z |
碳摻雜製程與高性能多晶矽奈米線薄膜電晶體之研究
|
李振銘; Lee, Chen-Ming; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:21:57Z |
具多閘極之修正蕭基位障電晶體及氮化鈦奈米晶粒記憶體之研究
|
盧季霈; Lu, Chi-Pei; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:48:41Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y(2)O(3) Stacked Dielectric
|
Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2014-12-08T15:48:17Z |
Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
|
Tsui, Bing-Yue; Lu, Chi-Pei; Liu, Hsiao-Han |
| 國立交通大學 |
2014-12-08T15:40:57Z |
Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
|
Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
|
Tsui, Bing-Yue; Cheng, Jung-Chien; Lee, Lurng-Shehng; Lee, Chwan-Ying; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
|
Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:07Z |
Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O-2 and Cl-2/O-2
|
Tseng, Yuan-Hung; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:35:52Z |
High performance of CNT-interconnects by the multi-layer structure
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:55Z |
Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
|
Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:25Z |
SixGe1-x Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:29Z |
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
|
Tsui, Bing-Yue; Kao, Ming-Hong |
| 國立交通大學 |
2014-12-08T15:30:45Z |
Investigation into the Performance of CNT-Interconnects by Spin Coating Technique
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:30:24Z |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
|
Tsui, Bing-Yue; Su, Ting-Ting; Shew, Bor-Yuan; Huang, Yang-Tung |
| 國立交通大學 |
2014-12-08T15:28:41Z |
A New Procedure to Extract Ultra-Low Specific Contact Resistivity
|
Tseng, Hsuan-Tzu; Tsui, Bing-Yue |
