| 國立交通大學 |
2014-12-08T15:48:41Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y(2)O(3) Stacked Dielectric
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Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2014-12-08T15:48:17Z |
Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
|
Tsui, Bing-Yue; Lu, Chi-Pei; Liu, Hsiao-Han |
| 國立交通大學 |
2014-12-08T15:40:57Z |
Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
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Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
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Tsui, Bing-Yue; Cheng, Jung-Chien; Lee, Lurng-Shehng; Lee, Chwan-Ying; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:07Z |
Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O-2 and Cl-2/O-2
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Tseng, Yuan-Hung; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:35:52Z |
High performance of CNT-interconnects by the multi-layer structure
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:55Z |
Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
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Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:25Z |
SixGe1-x Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:29Z |
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
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Tsui, Bing-Yue; Kao, Ming-Hong |
| 國立交通大學 |
2014-12-08T15:30:45Z |
Investigation into the Performance of CNT-Interconnects by Spin Coating Technique
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:30:24Z |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
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Tsui, Bing-Yue; Su, Ting-Ting; Shew, Bor-Yuan; Huang, Yang-Tung |
| 國立交通大學 |
2014-12-08T15:28:41Z |
A New Procedure to Extract Ultra-Low Specific Contact Resistivity
|
Tseng, Hsuan-Tzu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Impact of back gate bias on hot-carrier effects of n-channel tri-gate FETs (TGFETs)
|
Lin, Chia-Pin; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)
|
Tsui, Bing-Yue; Weng, Chien-Li; Chang, Chih-Lien; Wei, Jeng-Hua; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:24:27Z |
High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric
|
Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
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Tsui, Bing-Yue; Li, Po-Hsueh; Yen, Chih-Chan |
| 國立交通大學 |
2014-12-08T15:16:48Z |
Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction
|
Lin, Chia-Pin; Tsui, Bing-Yue; Hsieh, Chih-Ming; Huang, Chih-Feng |
| 國立交通大學 |
2014-12-08T15:16:19Z |
Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
|
Huang, Chih-Feng; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
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Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:15:16Z |
Process and characteristics of fully silicided source/drain (FSD) thin-film transistors
|
Lin, Chia-Pin; Hsiao, Yi-Hsuan; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:13:52Z |
Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
|
Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:13:40Z |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
