| 國立交通大學 |
2018-01-24T07:39:06Z |
鰭狀磊晶穿隧層穿隧電晶體之性能評估及n型磊晶穿隧層穿隧電晶體性能改善之研究
|
林柏劭; 崔秉鉞; Lin, Po-Shao; Tsui, Bing-Yue |
| 國立交通大學 |
2018-01-24T07:39:06Z |
氮化矽逆向梯形波導耦合器之設計、製作與量測
|
林劭恩; 崔秉鉞; 陳瓊華; Lin, Shao-En; Tsui, Bing-Yue; Chen, Chyong-Hua |
| 國立交通大學 |
2018-01-24T07:39:06Z |
晶粒結構對於平面與垂直閘極半導體-氧化矽-氮化矽-氧化矽-半導體記憶體寫入速度的影響
|
常瑋軒; 崔秉鉞; Chang, Wei-Hsuan; Tsui, Bing-Yue |
| 國立交通大學 |
2018-01-24T07:38:48Z |
以離子植入選擇性增加碳化矽氧化速率暨溝槽式接面位障蕭基二極體之研究
|
林忠佑; 崔秉鉞; Lin, Chung-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2018-01-24T07:38:25Z |
磊晶穿隧層穿隧電晶體之研究
|
王培宇; 崔秉鉞; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:56:49Z |
Investigation Into Gate-to-Source Capacitance Induced by Highly Efficient Band-to-Band Tunneling in p-Channel Ge Epitaxial Tunnel Layer Tunnel FET
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:56:33Z |
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
|
Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying |
| 國立交通大學 |
2017-04-21T06:55:57Z |
Trenched 4H-SiC with tapered sidewall formed by Cl-2/O-2 reactive ion etching
|
Tseng, Yuan-Hung; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:55:47Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:50:15Z |
Simulation of Grain-Boundary Traps Effect for 3D Vertical Gate NAND Flash Memory Cell : From Structure Geometry to Trap Description
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:49:47Z |
A Comparison Study on the Al-based Interfacial Layers for Ge MIS Devices
|
Yang, Yi-Gin; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:49:38Z |
A Reliable Schottky Barrier Height Extraction Procedure
|
Tsui, Bing-Yue; Fu, Tze-Yu |
| 國立交通大學 |
2017-04-21T06:49:06Z |
Effect of Formation Temperature on Quality of Gate Dielectric on Germanium Substrate
|
Wei, Erh-Jye; Tsui, Bing-Yue; Wu, Pin-Jiun |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact
|
Chen, Yi-Ju; Chou, Hung-Ju; Li, Ching-I; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:48:34Z |
Evaluation of Electrical Performance of Various Tunnel TFETs
|
Huang, Chi; Hung, Tao-Yi; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2016-03-28T08:17:42Z |
三維堆疊複晶矽非揮發性記憶體元件技術與分析
|
崔秉鉞; Tsui Bing-Yue |
| 國立交通大學 |
2016-03-28T08:17:34Z |
新穎穿隧電晶體及在其在超低功率生醫電子積體電路之應用 (III)
|
崔秉鉞; Tsui Bing-Yue |
| 國立交通大學 |
2016-03-28T08:17:29Z |
國立交通大學貴重儀器使用中心服務計畫
|
崔秉鉞; Tsui Bing-Yue |
| 國立交通大學 |
2016-03-28T00:04:27Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2015-12-02T03:00:54Z |
Investigation of Radiation Hardness of HfO2 Resistive Random Access Memory
|
Tsui, Bing-Yue; Chang, Ko-Chin; Shew, Bor-Yuan; Lee, Heng-Yuan; Tsai, Ming-Jinn |
| 國立交通大學 |
2015-12-02T03:00:53Z |
First-principles Calculations on the Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation
|
Lin, Han-Chi; Lin, Chiung-Yuan; Shih, Che-Ju; Tsui, Bing-Yue |
| 國立交通大學 |
2015-12-02T03:00:50Z |
Evaluation of Ultra-low Specific Contact Resistance Extraction by Cross-Bridge Kelvin Resistor Structure and Transmission Line Method Structure
|
Tsui, Bing-Yue; Tseng, Hsuan-Tzu |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Ultra-High Bit Density 3D NAND Flash-Featuring-Assisted Gate Operation
|
Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:17Z |
A Novel Approach Using Discrete Grain-Boundary Traps to Study the Variability of 3-D Vertical-Gate NAND Flash Memory Cells
|
Wang, Pei-Yu; Tsui, Bing-Yue |
