| 國立交通大學 |
2014-12-12T02:37:58Z |
鎳鍺化物與N型鍺接面摻雜析離對於蕭基位障的影響:透過第一原理計算
|
林翰奇; Lin, Han-Chi; 崔秉鉞; 林炯源; Tsui, Bing-Yue; Lin, Chiung-Yuan |
| 國立交通大學 |
2014-12-12T02:37:58Z |
鎳鍺化物接觸之N+-P鍺淺接面及接觸電阻之研究
|
施哲儒; Shih,Che-Ju; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T02:37:19Z |
以深層暫態能譜分析碳化矽缺陷之研究暨溝槽式接面蕭基位障二極體之設計分析
|
連崇德; Lien, Chong-De; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T02:30:42Z |
逆向基體之高功率金氧半場效應電晶體
|
吳旻達; Wu Min-Da; 崔秉鉞; Tsui Bing-Yue |
| 國立交通大學 |
2014-12-12T02:23:43Z |
前處理對二氧化鉿閘極介電層特性的影響
|
金立峰; Chin, Li-Feng; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:55:06Z |
利用低熱預算製程改善碳化矽電容介面能態密度
|
翁茂元; Marvin-Ueng; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:55:01Z |
萃取接觸阻抗係數方法之比較研究──CBKR結構與改良式TLM結構
|
曾炫滋; Tseng, Hsuan-Tzu; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:55:01Z |
精確且高效率之蕭基位障萃取程序
|
傅子瑜; Fu, Tz-Yu; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:55:01Z |
降低金屬與N型鍺接觸電阻之研究
|
高銘鴻; Kao, Ming-Hong; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:54:37Z |
游離輻射對具有不同厚度之鉿氧化物金氧半元件影響之研究
|
孫銘鴻; Sung, Ming-Hung; 崔秉鉞; 許博淵; Tsui, Bing-Yue; Shew, Bor-Yuan |
| 國立交通大學 |
2014-12-12T01:54:32Z |
游離輻射對電阻式記憶體的影響之研究
|
張克勤; Chang, Ko-Chin; 崔秉鉞; 許博淵; Tsui, Bing-Yue; Shew, Bor-Yuan |
| 國立交通大學 |
2014-12-12T01:46:07Z |
交絡奈米碳管網路薄膜電晶體特性之研究
|
陳定業; Chen, Ting-Yeh; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:45:53Z |
介面處理對鉿氧化物之抗極紫外光輻射損傷之影響研究
|
蘇婷婷; Su, Ting-Ting; 黃遠東; 崔秉鉞; 許博淵; Huang, Yang-Tung; Tsui, Bing-Yue; Shew, Bor-Yuan |
| 國立交通大學 |
2014-12-12T01:37:47Z |
矽化鎳之熱穩定性與超淺接面應用的研究
|
謝志民; Hsieh, Chih-Ming; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:17Z |
極紫外光輻射對先進非揮發性記憶體的影響
|
顏志展; Yen, Chih-Chan; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:14Z |
碳離子佈植對鎳化矽熱穩定性與碳化矽形成影響之研究
|
羅子歆; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:07Z |
極紫外光輻射對於高介電常數介質之影響研究
|
李勃學; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:37:06Z |
以奈米壓印技術製作大面積次微米孔洞陣列
|
周智超; Chou, Chih-Chao; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:32:22Z |
奈米碳管接觸阻抗與電場效應研究
|
張志廉; Chang, Chih Lien; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:27:07Z |
氧化鋁/二氧化鉿交錯層應用於非揮發性記憶體特性研究
|
蔡依成; Tsai, Yi-Cheng; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
非揮發性記憶體的儲存電荷的空間分佈對元件特性的影響
|
余昆武; Yu, Kun-Wu; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
奈米碳管記憶體之電荷儲存效應研究
|
王俊凱; Wang, Chun-Kai; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:26:54Z |
修正蕭基位障非揮發性記憶體於薄膜電晶體基板之研究
|
賴瑞堯; Lai, Jui-Yao; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:23:18Z |
碳摻雜製程與高性能多晶矽奈米線薄膜電晶體之研究
|
李振銘; Lee, Chen-Ming; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-12T01:21:57Z |
具多閘極之修正蕭基位障電晶體及氮化鈦奈米晶粒記憶體之研究
|
盧季霈; Lu, Chi-Pei; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:48:41Z |
High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y(2)O(3) Stacked Dielectric
|
Tsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu |
| 國立交通大學 |
2014-12-08T15:48:17Z |
Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
|
Tsui, Bing-Yue; Lu, Chi-Pei; Liu, Hsiao-Han |
| 國立交通大學 |
2014-12-08T15:40:57Z |
Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
|
Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
|
Tsui, Bing-Yue; Cheng, Jung-Chien; Lee, Lurng-Shehng; Lee, Chwan-Ying; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
|
Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:07Z |
Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O-2 and Cl-2/O-2
|
Tseng, Yuan-Hung; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:35:52Z |
High performance of CNT-interconnects by the multi-layer structure
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:55Z |
Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
|
Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:33:25Z |
SixGe1-x Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors
|
Lee, Chen-Ming; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:29Z |
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
|
Tsui, Bing-Yue; Kao, Ming-Hong |
| 國立交通大學 |
2014-12-08T15:30:45Z |
Investigation into the Performance of CNT-Interconnects by Spin Coating Technique
|
Chiu, Wei-Chih; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:30:24Z |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
|
Tsui, Bing-Yue; Su, Ting-Ting; Shew, Bor-Yuan; Huang, Yang-Tung |
| 國立交通大學 |
2014-12-08T15:28:41Z |
A New Procedure to Extract Ultra-Low Specific Contact Resistivity
|
Tseng, Hsuan-Tzu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Impact of back gate bias on hot-carrier effects of n-channel tri-gate FETs (TGFETs)
|
Lin, Chia-Pin; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)
|
Tsui, Bing-Yue; Weng, Chien-Li; Chang, Chih-Lien; Wei, Jeng-Hua; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:24:27Z |
High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric
|
Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
|
Tsui, Bing-Yue; Li, Po-Hsueh; Yen, Chih-Chan |
| 國立交通大學 |
2014-12-08T15:16:48Z |
Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction
|
Lin, Chia-Pin; Tsui, Bing-Yue; Hsieh, Chih-Ming; Huang, Chih-Feng |
| 國立交通大學 |
2014-12-08T15:16:19Z |
Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
|
Huang, Chih-Feng; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
|
Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:15:16Z |
Process and characteristics of fully silicided source/drain (FSD) thin-film transistors
|
Lin, Chia-Pin; Hsiao, Yi-Hsuan; Tsui, Bing-Yue |
| 國立交通大學 |
2014-12-08T15:13:52Z |
Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method
|
Wu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song |
| 國立交通大學 |
2014-12-08T15:13:40Z |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
