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机构 日期 题名 作者
國立交通大學 2019-04-02T06:00:18Z Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS
國立交通大學 2019-04-02T06:00:17Z Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY
國立交通大學 2014-12-08T15:44:33Z Plasma charging damage during contact hole etch in high-density plasma etcher Tsui, BY; Lin, SS; Tsai, CS; Hsia, CC
國立交通大學 2014-12-08T15:43:49Z Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS
國立交通大學 2014-12-08T15:43:24Z Impact of silicide formation on the resistance of common source/drain region Tsui, BY; Wu, MD; Gan, TC
國立交通大學 2014-12-08T15:43:20Z Surface-processing-enhanced copper diffusion into fluorosilicate glass Tsui, BY; Fang, KL; Lee, SD
國立交通大學 2014-12-08T15:43:19Z Impact of interface nature on deep sub-micron Al-plug resistance Tsui, BY; Yang, TJ; Ku, TK
國立交通大學 2014-12-08T15:41:32Z Investigation of Cu/TaN metal gate for metal-oxide-silicon devices Tsui, BY; Huang, CF
國立交通大學 2014-12-08T15:41:16Z Wide range work function modulation of binary alloys for MOSFET application Tsui, BY; Huang, CF
國立交通大學 2014-12-08T15:41:01Z Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003) Tsui, BY; Huang, CF
國立交通大學 2014-12-08T15:40:58Z Process sensitivity and robustness analysis of via-first dual-damascene process Tsui, BY; Chen, CW; Huang, SM; Lin, SS
國立交通大學 2014-12-08T15:40:53Z Metal drift induced electrical instability of porous low dielectric constant film Fang, KL; Tsui, BY
國立交通大學 2014-12-08T15:40:45Z Formation of interfacial layer during reactive sputtering of hafnium oxide Tsui, BY; Chang, HW
國立交通大學 2014-12-08T15:40:42Z Stability investigation of single-wafer process by using a spin etcher Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH
國立交通大學 2014-12-08T15:40:41Z Via-filling capability of copper film by CVD Lin, CL; Chen, PS; Lin, YC; Tsui, BY; Chen, MC
國立交通大學 2014-12-08T15:39:47Z Anisotropic thermal conductivity of nanoporous silica film Tsui, BY; Yang, CC; Fang, KL
國立交通大學 2014-12-08T15:39:16Z Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures Lan, YC; Lee, CT; Hu, Y; Chen, SH; Lee, CC; Tsui, BY; Lin, TL
國立交通大學 2014-12-08T15:39:05Z A novel 25-nm modified Schottky-barrier FinFET with high performance Tsui, BY; Lin, CP
國立交通大學 2014-12-08T15:38:30Z A comprehensive study on the FIBL of nanoscale MOSFETs Tsui, BY; Chin, LF
國立交通大學 2014-12-08T15:37:09Z Optimization of back side cleaning process to eliminate copper contamination Chou, WY; Tsui, BY; Kuo, CW; Kang, TK
國立交通大學 2014-12-08T15:37:09Z Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect Fang, KL; Tsui, BY
國立交通大學 2014-12-08T15:36:22Z Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY
國立交通大學 2014-12-08T15:27:01Z Electrical reliability issues of integrating low-K dielectrics with Cu metallization Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:46Z Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect Fang, KL; Tsui, BY; Yang, CC; Lee, SD
國立交通大學 2014-12-08T15:26:35Z Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection Fang, KL; Tsui, BY; Yang, CC; Chen, MC; Lee, SD; Beekmann, K; Tony, W; Giles, K; Ishaq, S

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