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机构 日期 题名 作者
國立交通大學 2014-12-08T15:40:58Z Process sensitivity and robustness analysis of via-first dual-damascene process Tsui, BY; Chen, CW; Huang, SM; Lin, SS
國立交通大學 2014-12-08T15:40:53Z Metal drift induced electrical instability of porous low dielectric constant film Fang, KL; Tsui, BY
國立交通大學 2014-12-08T15:40:45Z Formation of interfacial layer during reactive sputtering of hafnium oxide Tsui, BY; Chang, HW
國立交通大學 2014-12-08T15:40:42Z Stability investigation of single-wafer process by using a spin etcher Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH
國立交通大學 2014-12-08T15:40:41Z Via-filling capability of copper film by CVD Lin, CL; Chen, PS; Lin, YC; Tsui, BY; Chen, MC
國立交通大學 2014-12-08T15:39:47Z Anisotropic thermal conductivity of nanoporous silica film Tsui, BY; Yang, CC; Fang, KL
國立交通大學 2014-12-08T15:39:16Z Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures Lan, YC; Lee, CT; Hu, Y; Chen, SH; Lee, CC; Tsui, BY; Lin, TL
國立交通大學 2014-12-08T15:39:05Z A novel 25-nm modified Schottky-barrier FinFET with high performance Tsui, BY; Lin, CP
國立交通大學 2014-12-08T15:38:30Z A comprehensive study on the FIBL of nanoscale MOSFETs Tsui, BY; Chin, LF
國立交通大學 2014-12-08T15:37:09Z Optimization of back side cleaning process to eliminate copper contamination Chou, WY; Tsui, BY; Kuo, CW; Kang, TK
國立交通大學 2014-12-08T15:37:09Z Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect Fang, KL; Tsui, BY
國立交通大學 2014-12-08T15:36:22Z Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY
國立交通大學 2014-12-08T15:27:01Z Electrical reliability issues of integrating low-K dielectrics with Cu metallization Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS
國立交通大學 2014-12-08T15:26:46Z Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect Fang, KL; Tsui, BY; Yang, CC; Lee, SD
國立交通大學 2014-12-08T15:26:35Z Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection Fang, KL; Tsui, BY; Yang, CC; Chen, MC; Lee, SD; Beekmann, K; Tony, W; Giles, K; Ishaq, S
國立交通大學 2014-12-08T15:26:21Z Anisotropic thermal conductivity of nano-porous silica film Tsui, BY; Yang, CC; Fang, KL
國立交通大學 2014-12-08T15:26:19Z A novel wafer reclaim method for silicon carbide film Tsui, BY; Fang, KL; Wu, CH; Li, YH
國立交通大學 2014-12-08T15:25:51Z A novel fully self-aligned process for high cell density trench gate power MOSFETs Tsui, BY; Gan, TC; Wu, MD; Chou, HH; Wu, ZL; Sune, CT
國立交通大學 2014-12-08T15:25:51Z Trench gate power MOSFETs with retrograde body profile Tsui, BY; Wu, MD; Gan, TC; Chou, HH; Wu, ZL; Sune, CT
國立交通大學 2014-12-08T15:25:45Z High thermal stability metal gate with tunable work function Huang, CF; Tsui, BY
國立交通大學 2014-12-08T15:25:38Z Characteristics of Modified-Schottky-Barrier (MSB) FinFETs Lin, CP; Tsui, BY
國立交通大學 2014-12-08T15:25:11Z 0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications Tsui, BY; Lin, CP; Huang, CF; Xiao, YH
國立交通大學 2014-12-08T15:19:37Z High-performance poly-Si TFTs fabricated by implant-to-silicide technique Lin, CP; Mao, YH; Tsui, BY
國立交通大學 2014-12-08T15:18:59Z Hot-carrier effects in p-channel modified Schottky-barrier FinFETs Lin, CP; Tsui, BY
國立交通大學 2014-12-08T15:18:40Z Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS

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