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"tsui by"的相關文件
顯示項目 16-40 / 54 (共3頁)
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| 國立交通大學 |
2014-12-08T15:39:47Z |
Anisotropic thermal conductivity of nanoporous silica film
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Tsui, BY; Yang, CC; Fang, KL |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
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Lan, YC; Lee, CT; Hu, Y; Chen, SH; Lee, CC; Tsui, BY; Lin, TL |
| 國立交通大學 |
2014-12-08T15:39:05Z |
A novel 25-nm modified Schottky-barrier FinFET with high performance
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Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:38:30Z |
A comprehensive study on the FIBL of nanoscale MOSFETs
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Tsui, BY; Chin, LF |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Optimization of back side cleaning process to eliminate copper contamination
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Chou, WY; Tsui, BY; Kuo, CW; Kang, TK |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect
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Fang, KL; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
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Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:46Z |
Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect
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Fang, KL; Tsui, BY; Yang, CC; Lee, SD |
| 國立交通大學 |
2014-12-08T15:26:35Z |
Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection
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Fang, KL; Tsui, BY; Yang, CC; Chen, MC; Lee, SD; Beekmann, K; Tony, W; Giles, K; Ishaq, S |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Anisotropic thermal conductivity of nano-porous silica film
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Tsui, BY; Yang, CC; Fang, KL |
| 國立交通大學 |
2014-12-08T15:26:19Z |
A novel wafer reclaim method for silicon carbide film
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Tsui, BY; Fang, KL; Wu, CH; Li, YH |
| 國立交通大學 |
2014-12-08T15:25:51Z |
A novel fully self-aligned process for high cell density trench gate power MOSFETs
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Tsui, BY; Gan, TC; Wu, MD; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Trench gate power MOSFETs with retrograde body profile
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Tsui, BY; Wu, MD; Gan, TC; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:45Z |
High thermal stability metal gate with tunable work function
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Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:25:38Z |
Characteristics of Modified-Schottky-Barrier (MSB) FinFETs
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Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:25:11Z |
0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications
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Tsui, BY; Lin, CP; Huang, CF; Xiao, YH |
| 國立交通大學 |
2014-12-08T15:19:37Z |
High-performance poly-Si TFTs fabricated by implant-to-silicide technique
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Lin, CP; Mao, YH; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:59Z |
Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
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Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:11Z |
A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
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Tsui, BY; Fang, KL |
| 國立交通大學 |
2014-12-08T15:18:05Z |
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
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Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
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Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
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Tsui, BY; Huang, CF; Lu, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
High-performance poly-silicon TFTs using HfO2 gate dielectric
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Lin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH |
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