|
"tsui by"的相關文件
顯示項目 36-54 / 54 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:18:11Z |
A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
|
Tsui, BY; Fang, KL |
| 國立交通大學 |
2014-12-08T15:18:05Z |
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
|
Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
|
Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
|
Tsui, BY; Huang, CF; Lu, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
High-performance poly-silicon TFTs using HfO2 gate dielectric
|
Lin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide
|
Wu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:16:21Z |
Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
|
Huang, CF; Tsui, BY; Tzeng, PJ; Lee, LS; Tsai, MJ |
| 國立交通大學 |
2014-12-08T15:06:00Z |
A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:50Z |
A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:36Z |
FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:36Z |
HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATION
|
TSAI, JY; TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:30Z |
FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTION
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:24Z |
LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICON
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALING
|
TSUI, BY; TSAI, JY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:04:48Z |
CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSI
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:04:40Z |
SERIES RESISTANCE OF SELF-ALIGNED SILICIDED SOURCE DRAIN STRUCTURE
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:04:40Z |
EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE
|
TSUI, BY; TSAI, JY; WU, TS; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:04:35Z |
DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALING
|
TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:03:50Z |
ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURE
|
TSUI, BY; CHEN, MC |
顯示項目 36-54 / 54 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目
|
