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Showing items 26-50 of 54 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:26:21Z |
Anisotropic thermal conductivity of nano-porous silica film
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Tsui, BY; Yang, CC; Fang, KL |
| 國立交通大學 |
2014-12-08T15:26:19Z |
A novel wafer reclaim method for silicon carbide film
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Tsui, BY; Fang, KL; Wu, CH; Li, YH |
| 國立交通大學 |
2014-12-08T15:25:51Z |
A novel fully self-aligned process for high cell density trench gate power MOSFETs
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Tsui, BY; Gan, TC; Wu, MD; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Trench gate power MOSFETs with retrograde body profile
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Tsui, BY; Wu, MD; Gan, TC; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:45Z |
High thermal stability metal gate with tunable work function
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Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:25:38Z |
Characteristics of Modified-Schottky-Barrier (MSB) FinFETs
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Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:25:11Z |
0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications
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Tsui, BY; Lin, CP; Huang, CF; Xiao, YH |
| 國立交通大學 |
2014-12-08T15:19:37Z |
High-performance poly-Si TFTs fabricated by implant-to-silicide technique
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Lin, CP; Mao, YH; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:59Z |
Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
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Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:11Z |
A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
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Tsui, BY; Fang, KL |
| 國立交通大學 |
2014-12-08T15:18:05Z |
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
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Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
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Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
|
Tsui, BY; Huang, CF; Lu, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
High-performance poly-silicon TFTs using HfO2 gate dielectric
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Lin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide
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Wu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:16:21Z |
Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
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Huang, CF; Tsui, BY; Tzeng, PJ; Lee, LS; Tsai, MJ |
| 國立交通大學 |
2014-12-08T15:06:00Z |
A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
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TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:50Z |
A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
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TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:36Z |
FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM
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TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:36Z |
HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATION
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TSAI, JY; TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:30Z |
FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTION
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TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:24Z |
LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICON
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TSUI, BY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALING
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TSUI, BY; TSAI, JY; CHEN, MC |
| 國立交通大學 |
2014-12-08T15:04:48Z |
CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSI
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TSUI, BY; CHEN, MC |
Showing items 26-50 of 54 (3 Page(s) Totally)
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