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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"tsui by"的相关文件
显示项目 31-40 / 54 (共6页)
<< < 1 2 3 4 5 6 > >>
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| 國立交通大學 |
2014-12-08T15:25:38Z |
Characteristics of Modified-Schottky-Barrier (MSB) FinFETs
|
Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:25:11Z |
0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications
|
Tsui, BY; Lin, CP; Huang, CF; Xiao, YH |
| 國立交通大學 |
2014-12-08T15:19:37Z |
High-performance poly-Si TFTs fabricated by implant-to-silicide technique
|
Lin, CP; Mao, YH; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:59Z |
Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
|
Lin, CP; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks
|
Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:11Z |
A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
|
Tsui, BY; Fang, KL |
| 國立交通大學 |
2014-12-08T15:18:05Z |
Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
|
Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
|
Huang, CF; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
|
Tsui, BY; Huang, CF; Lu, CH |
| 國立交通大學 |
2014-12-08T15:16:41Z |
High-performance poly-silicon TFTs using HfO2 gate dielectric
|
Lin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH |
显示项目 31-40 / 54 (共6页)
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