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Showing items 6-30 of 54 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:20Z |
Surface-processing-enhanced copper diffusion into fluorosilicate glass
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Tsui, BY; Fang, KL; Lee, SD |
| 國立交通大學 |
2014-12-08T15:43:19Z |
Impact of interface nature on deep sub-micron Al-plug resistance
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Tsui, BY; Yang, TJ; Ku, TK |
| 國立交通大學 |
2014-12-08T15:41:32Z |
Investigation of Cu/TaN metal gate for metal-oxide-silicon devices
|
Tsui, BY; Huang, CF |
| 國立交通大學 |
2014-12-08T15:41:16Z |
Wide range work function modulation of binary alloys for MOSFET application
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Tsui, BY; Huang, CF |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
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Tsui, BY; Huang, CF |
| 國立交通大學 |
2014-12-08T15:40:58Z |
Process sensitivity and robustness analysis of via-first dual-damascene process
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Tsui, BY; Chen, CW; Huang, SM; Lin, SS |
| 國立交通大學 |
2014-12-08T15:40:53Z |
Metal drift induced electrical instability of porous low dielectric constant film
|
Fang, KL; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:40:45Z |
Formation of interfacial layer during reactive sputtering of hafnium oxide
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Tsui, BY; Chang, HW |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Stability investigation of single-wafer process by using a spin etcher
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Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH |
| 國立交通大學 |
2014-12-08T15:40:41Z |
Via-filling capability of copper film by CVD
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Lin, CL; Chen, PS; Lin, YC; Tsui, BY; Chen, MC |
| 國立交通大學 |
2014-12-08T15:39:47Z |
Anisotropic thermal conductivity of nanoporous silica film
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Tsui, BY; Yang, CC; Fang, KL |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
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Lan, YC; Lee, CT; Hu, Y; Chen, SH; Lee, CC; Tsui, BY; Lin, TL |
| 國立交通大學 |
2014-12-08T15:39:05Z |
A novel 25-nm modified Schottky-barrier FinFET with high performance
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Tsui, BY; Lin, CP |
| 國立交通大學 |
2014-12-08T15:38:30Z |
A comprehensive study on the FIBL of nanoscale MOSFETs
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Tsui, BY; Chin, LF |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Optimization of back side cleaning process to eliminate copper contamination
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Chou, WY; Tsui, BY; Kuo, CW; Kang, TK |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect
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Fang, KL; Tsui, BY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
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Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
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Wu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:46Z |
Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect
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Fang, KL; Tsui, BY; Yang, CC; Lee, SD |
| 國立交通大學 |
2014-12-08T15:26:35Z |
Electrical and material stability of Orion(TM) CVD ultra low-k dielectric film for copper interconnection
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Fang, KL; Tsui, BY; Yang, CC; Chen, MC; Lee, SD; Beekmann, K; Tony, W; Giles, K; Ishaq, S |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Anisotropic thermal conductivity of nano-porous silica film
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Tsui, BY; Yang, CC; Fang, KL |
| 國立交通大學 |
2014-12-08T15:26:19Z |
A novel wafer reclaim method for silicon carbide film
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Tsui, BY; Fang, KL; Wu, CH; Li, YH |
| 國立交通大學 |
2014-12-08T15:25:51Z |
A novel fully self-aligned process for high cell density trench gate power MOSFETs
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Tsui, BY; Gan, TC; Wu, MD; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Trench gate power MOSFETs with retrograde body profile
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Tsui, BY; Wu, MD; Gan, TC; Chou, HH; Wu, ZL; Sune, CT |
| 國立交通大學 |
2014-12-08T15:25:45Z |
High thermal stability metal gate with tunable work function
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Huang, CF; Tsui, BY |
Showing items 6-30 of 54 (3 Page(s) Totally)
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