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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立成功大學 |
2008 |
Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess
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Lee, Kuan-Wei; Lin, Hsien-Chang; Tu, Chao-Hsien; Lee, Kai-Lin; Wang, Yeong-Her |
| 國立成功大學 |
2007-07-19 |
利用液相氧化法做鈍化處理磷化銦鎵/砷化鎵異質接面雙極性電晶體之研究
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杜朝賢; Tu, Chao-Hsien |
| 國立成功大學 |
2007-03 |
Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator
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Lee, Kuan-Wei; Lee, Kai-Lin; Lin, Xian-Zheng; Tu, Chao-Hsien; Wang, Yeong-Her |
| 國立成功大學 |
2007 |
Near-room-temperature selective oxidation on InAlAs and application to In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs
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Lee, Kuan-Wei; Lee, Kai-Lin; Lin, Hsien-Chang; Tu, Chao-Hsien; Hu, Chih-Chun; Wang, Yeong-Her |
Showing items 1-4 of 4 (1 Page(s) Totally)
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