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Showing items 1-22 of 22 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:47:56Z |
Investigation of Efficiency Droop for UV-LED with N-type AlGaN Layer
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Tu, Po-Min; Chang, Jet-Rung; Huang, Shih-Cheng; Yang, Shun-Kuei; Lin, Ya-wen; Hung, Tzu-Chien; Hsu, Chih-Peng; Chang, Chun-Yen |
| 國立交通大學 |
2019-04-03T06:47:55Z |
Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer
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Huang, Shih-Cheng; Shen, Kun-Ching; Tu, Po-Min; Wuu, Dong-Sing; Kuo, Hao-Chung; Horng, Ray-Hua |
| 國立交通大學 |
2017-04-21T06:50:01Z |
Study of Efficiency Droop in InGaN-based Near-UV LEDs with Quaternary InAlGaN Barrier
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Tu, Po-Min; Huang, Shih-Cheng; Lin, Ya-wen; Yang, Shun-Kuei; Hsu, Chih-Peng; Chang, Jet-Rung; Chang, Chun-Yen |
| 國立交通大學 |
2017-04-21T06:50:01Z |
Investigation of Efficiency Droop in GaN-based UV LEDs with N-type AlGaN Underlayer
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Yang, Shun-Kuei; Tu, Po-Min; Huang, Shih-Cheng; Lin, Ya-wen; Hsu, Chih-Peng; Chang, Jet-Rung; Chang, Chun-Yen |
| 國立交通大學 |
2015-11-26T01:06:46Z |
高效率近紫外光發光二極體元件製作
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凃博閔; Tu, Po-Min; 冉曉雯; 張俊彥; Zan, Hsiao-Wen; Chang, Chun-Yen |
| 國立交通大學 |
2015-07-21T11:20:39Z |
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
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Tsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I; Kuo, Hao-Chung |
| 國立交通大學 |
2015-07-21T08:28:22Z |
Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique
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Chiu, Ching-Hsueh; Lin, Chien-Chung; Tu, Po-Min; Huang, Shih-Cheng; Tu, Chia-Cheng; Li, Jin-Chai; Li, Zhen-Yu; Uen, Wu-Yih; Zan, Hsiao-Wen; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:48:28Z |
Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
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Lu, Tien-Chang; Chen, Shih-Wei; Wu, Tzeng-Tsong; Tu, Po-Min; Chen, Chien-Kang; Chen, Cheng-Hung; Li, Zhen-Yu; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Natural substrate lift-off technique for vertical light-emitting diodes
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Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:35:49Z |
High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
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Li, Zhen-Yu; Lee, Chia-Yu; Lin, Da-Wei; Lin, Bing-Cheng; Shen, Kun-Ching; Chiu, Ching-Hsueh; Tu, Po-Min; Kuo, Hao-Chung; Uen, Wu-Yih; Horng, Ray-Hua; Chi, Gou-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:30:33Z |
Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates
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Chiu, Ching-Hsueh; Tu, Po-Min; Lin, Chien-Chung; Lin, Da-Wei; Li, Zhen-Yu; Chuang, Kai-Lin; Chang, Jet-Rung; Lu, Tien-Chang; Zan, Hsiao-Wen; Chen, Chiang-Yao; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:29:51Z |
High Q microcavity light emitting diodes with buried AlN current apertures
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Cheng, Bo-Siao; Wu, Yun-Lin; Lu, Tien-Chang; Chiu, Ching-Hsueh; Chen, Cheng-Hung; Tu, Po-Min; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:24:28Z |
Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer
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Lo, Ming-Hua; Tu, Po-Min; Cheng, Yuh-Jen; Wang, Chao-Hsun; Hung, Cheng-Wei; Hsu, Shih-Chieh; Kuo, Hao-Chung; Zan, Hsiao-Wen; Wang, Shing-Chung; Chang, Chun-Yen; Liu, Che-Ming |
| 國立交通大學 |
2014-12-08T15:23:18Z |
Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
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Chen, Cheng-Chang; Chiu, Ching-Hsueh; Tu, Po-Min; Kuo, Ming-Yen; Shih, M. H.; Huang, Ji-Kai; Kuo, Hao-Chung; Zan, Hsiao-Wen; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:23:18Z |
Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
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Chiu, Ching-Hsueh; Tu, Po-Min; Chang, Shih-Pang; Lin, Chien-Chung; Jang, Chung-Ying; Li, Zhen-Yu; Yang, Hung-Chih; Zan, Hsiao-Wen; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:22:28Z |
Reduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrier
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Chiu, Ching-Hsueh; Tu, Po-Min; Chang, Jet-Rung; Chang, Wei-Ting; Kuo, Hao-Chung; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:21:36Z |
Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
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Huang, Shih-Cheng; Shen, Kun-Ching; Wuu, Dong-Sing; Tu, Po-Min; Kuo, Hao-Chung; Tu, Chia-Cheng; Horng, Ray-Hua |
| 國立交通大學 |
2014-12-08T15:21:01Z |
Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
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Lu, Tien-Chang; Wu, Tzeng-Tsong; Chen, Shih-Wei; Tu, Po-Min; Li, Zhen-Yu; Chen, Chien-Kang; Chen, Cheng-Hung; Kuo, Hao-Chung; Wang, Shing-Chung; Zan, Hsiao-Wen; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:20:30Z |
High quality vertical light emitting diodes fabrication by mechanical lift-off technique
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Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:11:32Z |
Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
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Tu, Po-Min; Chang, Chun-Yen; Huang, Shih-Cheng; Chiu, Ching-Hsueh; Chang, Jet-Rung; Chang, Wei-Ting; Wuu, Dong-Sing; Zan, Hsiao-Wen; Lin, Chien-Chung; Kuo, Hao-Chung; Hsu, Chih-Peng |
| 淡江大學 |
2014-03-01 |
Natural substrate lift-off technique for vertical light-emitting diodes
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Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen |
| 淡江大學 |
2011-08 |
High-quality vertical light emitting diodes fabrication by mechanical lift-off technique
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Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen |
Showing items 1-22 of 22 (1 Page(s) Totally)
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