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| 國立成功大學 |
2003-08 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
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Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann |
| 國立成功大學 |
2003 |
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature
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Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung |
| 國立成功大學 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung |
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