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Institution Date Title Author
國立臺灣科技大學 2020 Reactively sputtered sb-gan films and its hetero-junction diode: The exploration of the n-to-p transition Thao, C.P.;Tuan, Tuan T.T.A.;Kuo, D.-H.;Ke, W.-C.;Na, T.T.V.S.
國立臺灣科技大學 2019 Electrical characterization of RF reactive sputtered p-Mg-InxGa1-xN/n-Si Hetero-Junction Diodes without using Buffer Layer Tuan, Tuan T.T.A.;Kuo, D.-H.;Cao, P.T.;Nguyen, V.S.;Pham, Q.-P.;Nghi, V.K.;Tran, N.P.L.
國立臺灣科技大學 2017 Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105 Tuan, Tuan T.T.A;Kuo, D.-H;Saragih, A.D;Li, G.-Z.
國立臺灣科技大學 2017 Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer Saragih, A.D;Kuo, D.-H;Tuan, Tuan T.T.A.
國立臺灣科技大學 2017 CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type InxGa1−xN Thin Film Solar Cells Chen, W.-L;Kuo, D.-H;Tuan, Tuan T.T.A.
國立臺灣科技大學 2015 Electrical and structural properties of Mg-doped InxGa1-xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering Kuo, D.-H;Tuan, Tuan T.T.A;Li, C.-C;Yen, W.-C.

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