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總筆數 :2825920
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31410548
線上人數 :
1230
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"tuan tuan t t a"的相關文件
顯示項目 1-6 / 6 (共1頁)
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| 國立臺灣科技大學 |
2020 |
Reactively sputtered sb-gan films and its hetero-junction diode: The exploration of the n-to-p transition
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Thao, C.P.;Tuan, Tuan T.T.A.;Kuo, D.-H.;Ke, W.-C.;Na, T.T.V.S. |
| 國立臺灣科技大學 |
2019 |
Electrical characterization of RF reactive sputtered p-Mg-InxGa1-xN/n-Si Hetero-Junction Diodes without using Buffer Layer
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Tuan, Tuan T.T.A.;Kuo, D.-H.;Cao, P.T.;Nguyen, V.S.;Pham, Q.-P.;Nghi, V.K.;Tran, N.P.L. |
| 國立臺灣科技大學 |
2017 |
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105
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Tuan, Tuan T.T.A;Kuo, D.-H;Saragih, A.D;Li, G.-Z. |
| 國立臺灣科技大學 |
2017 |
Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer
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Saragih, A.D;Kuo, D.-H;Tuan, Tuan T.T.A. |
| 國立臺灣科技大學 |
2017 |
CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type InxGa1−xN Thin Film Solar Cells
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Chen, W.-L;Kuo, D.-H;Tuan, Tuan T.T.A. |
| 國立臺灣科技大學 |
2015 |
Electrical and structural properties of Mg-doped InxGa1-xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering
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Kuo, D.-H;Tuan, Tuan T.T.A;Li, C.-C;Yen, W.-C. |
顯示項目 1-6 / 6 (共1頁)
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