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机构 日期 题名 作者
國立成功大學 2007-07 Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs Hsueh, Kuang-Po; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju; Hsu, Chia-Hung; Lin, Bi-Hsuan
國立成功大學 2007-06-25 Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer Sheu, Jinn-Kong; Lu, Y. S.; Lee, Min-Lum; Lai, Wei-Chi; Kuo, C. H.; Tun, Chun-Ju
國立成功大學 2007-03-26 Temperature-dependent study of n-ZnO/p-GaN diodes Hsueh, Kuang-Po; Huang, Shou-Chien; Li, Ching-Tai; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju
國立成功大學 2007 Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering Sheu, Jinn-Kong; Shu, K. W.; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung
國立成功大學 2006-10-30 Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung
國立彰化師範大學 2006-10 Abnormal Blue Shift of InGaN Micro-size Light Emitting Diodes Pong, Bao-Jen; Chen, Chi-Hsing; Yen, Sheng-Horng; Hsu, Jin-Fu; Tun, Chun-Ju; Kuo, Yen-Kuang; Kuo, Cheng-Huang; Chi, Gou-Chung
國立成功大學 2006-01-23 Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Lin, S. W.
國立成功大學 2006-01 Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer Tun, Chun-Ju; Sheu, Jinn-Kong; Pong, Bao-Jen; Lee, Min-Lum; Lee, Ming-Yu; Hsieh, Cheng-Kang; Hu, Ching-Chung; Chi, Gou-Chung
國立成功大學 2006 Planar ultraviolet photodetectors formed by Si implantation into p-GaN Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Tun, Chun-Ju; Chi, Gou-Chung
國立成功大學 2006 Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride Tun, Chun-Ju; Sheu, Jinn-Kong; Lee, Min-Lum; Hu, Ching-Chung; Hsieh, Cheng-Kang; Chi, Gou-Chung
國立成功大學 2003-08-01 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學 2003-08 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann
國立成功大學 2003 Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung
國立成功大學 2003 Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung
國立成功大學 2002-12 GaN p-n junction diode formed by Si ion implantation into p-GaN Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung
國立成功大學 2002-11-25 Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN Sheu, Jinn-Kung; Lee, M. L.; Yeh, L. S.; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, C. T.
國立成功大學 2002-08 Characterization of Si implants in p-type GaN Sheu, Jinn-Kung; Lee, M. L.; Tun, Chun-Ju; Kao, C. J.; Yeh, L. S.; Chang, Shoou-Jinn; Chi, Gou-Chung
國立成功大學 2002-02-15 n(+)-GaN formed by Si implantation into p-GaN Sheu, Jinn-Kung; Tun, Chun-Ju; Tsai, M. S.; Lee, Cheng-Chung; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin

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