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| 國立交通大學 |
2019-04-03T06:38:26Z |
Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering
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Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung |
| 國立交通大學 |
2014-12-08T15:06:39Z |
Effect of rapid thermal annealing on Mg(x)Zn(1-x)O films prepared by radio-frequency magnetron sputtering
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Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung |
| 國立成功大學 |
2009-09 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
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Lai, Wei-Chihh; Chen, P. H.; Chang, L. C.; Kuo, Cheng-Huang; Sheu, Jinn-Kong; Tun, Chun-Ju; Shei, Shih-Chang |
| 國立成功大學 |
2009-07 |
The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers
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Shi, Jin-Wei; Guol, Shi-Hao; Lin, C. S.; Sheu, Jinn-Kong; Chang, Kuo-Hua; Lai, Wei-Chih; Kuo, C. H.; Tun, Chun-Ju; Chyi, Jen-Inn |
| 國立成功大學 |
2009-03-15 |
Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step
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Kuo, Cheng-Huang; Fu, Y. K.; Yeh, C. L.; Tun, Chun-Ju; Chen, P. H.; Lai, Wei-Chihh; Chang, Shoou-Jinn |
| 國立成功大學 |
2008-10-01 |
Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition
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Fu, Y. K.; Kuo, C. H.; Tun, Chun-Ju; Kuo, C. W.; Lai, Wei-Chih; Chi, Gou-Chung; Pan, Ching-Jen; Chen, M. C.; Hong, H. F.; Lan, S. M. |
| 國立成功大學 |
2008-08 |
Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors
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Lai, Wei-Chihh; Sheu, Jinn-Kong; Fu, Yi-Keng; Kuo, Cheng-Huang; Kuo, Chi-Wen; Tun, Chun-Ju; Pan, Ching-Jen; Chi, Gou-Chung |
| 國立成功大學 |
2008-05-19 |
Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)
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Tsao, F. C.; Chen, J. Y.; Kuo, C. H.; Chi, Gou-Chung; Pan, Ching-Jen; Huang, P. J.; Tun, Chun-Ju; Pong, B. J.; Hsueh, T. H.; Chang, C. Y.; Pearton, S. J.; Ren, F. |
| 國立成功大學 |
2008-03 |
Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions
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Shi, Jin-Wei; Chen, C. C.; Wang, C. K.; Lin, C. S.; Sheu, Jinn-Kong; Lai, Wei-Chih; Kuo, C. H.; Tun, Chun-Ju; Yang, T. H.; Tsao, F. C.; Chyi, J. I |
| 國立成功大學 |
2008 |
Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer
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Kuo, C. H.; Yeh, C. L.; Chen, P. H.; Lai, Wei-Chih; Tun, Chun-Ju; Sheu, Jinn-Kong; Chi, Gou-Chung |
| 國立成功大學 |
2007-07 |
Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs
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Hsueh, Kuang-Po; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju; Hsu, Chia-Hung; Lin, Bi-Hsuan |
| 國立成功大學 |
2007-06-25 |
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
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Sheu, Jinn-Kong; Lu, Y. S.; Lee, Min-Lum; Lai, Wei-Chi; Kuo, C. H.; Tun, Chun-Ju |
| 國立成功大學 |
2007-03-26 |
Temperature-dependent study of n-ZnO/p-GaN diodes
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Hsueh, Kuang-Po; Huang, Shou-Chien; Li, Ching-Tai; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju |
| 國立成功大學 |
2007 |
Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering
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Sheu, Jinn-Kong; Shu, K. W.; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立成功大學 |
2006-10-30 |
Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring
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Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立彰化師範大學 |
2006-10 |
Abnormal Blue Shift of InGaN Micro-size Light Emitting Diodes
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Pong, Bao-Jen; Chen, Chi-Hsing; Yen, Sheng-Horng; Hsu, Jin-Fu; Tun, Chun-Ju; Kuo, Yen-Kuang; Kuo, Cheng-Huang; Chi, Gou-Chung |
| 國立成功大學 |
2006-01-23 |
Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
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Sheu, Jinn-Kong; Lee, Min-Lum; Tun, Chun-Ju; Lin, S. W. |
| 國立成功大學 |
2006-01 |
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer
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Tun, Chun-Ju; Sheu, Jinn-Kong; Pong, Bao-Jen; Lee, Min-Lum; Lee, Ming-Yu; Hsieh, Cheng-Kang; Hu, Ching-Chung; Chi, Gou-Chung |
| 國立成功大學 |
2006 |
Planar ultraviolet photodetectors formed by Si implantation into p-GaN
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Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Tun, Chun-Ju; Chi, Gou-Chung |
| 國立成功大學 |
2006 |
Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride
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Tun, Chun-Ju; Sheu, Jinn-Kong; Lee, Min-Lum; Hu, Ching-Chung; Hsieh, Cheng-Kang; Chi, Gou-Chung |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
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Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann |
| 國立成功大學 |
2003 |
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature
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Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung |
| 國立成功大學 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung |
| 國立成功大學 |
2002-12 |
GaN p-n junction diode formed by Si ion implantation into p-GaN
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Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung |
Showing items 1-25 of 28 (2 Page(s) Totally)
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