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Showing items 21-28 of 28 (2 Page(s) Totally)
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| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
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Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann |
| 國立成功大學 |
2003 |
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature
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Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung |
| 國立成功大學 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung |
| 國立成功大學 |
2002-12 |
GaN p-n junction diode formed by Si ion implantation into p-GaN
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Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 國立成功大學 |
2002-11-25 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
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Sheu, Jinn-Kung; Lee, M. L.; Yeh, L. S.; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, C. T. |
| 國立成功大學 |
2002-08 |
Characterization of Si implants in p-type GaN
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Sheu, Jinn-Kung; Lee, M. L.; Tun, Chun-Ju; Kao, C. J.; Yeh, L. S.; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 國立成功大學 |
2002-02-15 |
n(+)-GaN formed by Si implantation into p-GaN
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Sheu, Jinn-Kung; Tun, Chun-Ju; Tsai, M. S.; Lee, Cheng-Chung; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
Showing items 21-28 of 28 (2 Page(s) Totally)
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