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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:51Z |
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
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Tu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP |
| 國立交通大學 |
2014-12-08T15:40:11Z |
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layers
|
Tu, RC; Chuo, CC; Pan, SM; Fan, YM; Tsai, CE; Wang, TC; Tun, CJ; Chi, GC; Lee, BC; Lee, CP |
| 國立交通大學 |
2014-12-08T15:39:36Z |
Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition
|
Tu, RC; Tun, CJ; Chuo, CC; Lee, BC; Tsai, CE; Wang, TC; Chi, J; Lee, CP; Chi, GC |
Showing items 1-3 of 3 (1 Page(s) Totally)
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