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| 國立交通大學 |
2014-12-08T15:45:15Z |
MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
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Lin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
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Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:06:58Z |
Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
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Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Luong, Tien-Tung; Wong, Yuen-Yee; Li, Tingkai; Tweet, Doug; Chiang, Chen-Hao |
| 國立成功大學 |
2007-11-26 |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
|
Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
Showing items 1-4 of 4 (1 Page(s) Totally)
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