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| 臺大學術典藏 |
2021-09-02T00:04:20Z |
Promising Engineering Approaches for Improving the Reliability of HfZrOx2-D and 3-D Ferroelectric Random Access Memories
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Lin Y.-D;Yeh P.-C;Tzeng P.-J;Hou T.-H;Wu C.-I;King Y.-C;Lin C.J.; Lin Y.-D; Yeh P.-C; Tzeng P.-J; Hou T.-H; Wu C.-I; King Y.-C; Lin C.J.; CHIH-I WU |
| 臺大學術典藏 |
2021-09-02T00:04:19Z |
Low-environmental-interference highly-sensitive TMR biosensor for in-vitro diagnosis application
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Kuo Y.-C;Lee H.-H;Wang D.-Y;Chang Y.-J;Yang S.-Y;Hsin Y.-C;Wang I.-J;Chen G.-L;Su Y.-H;Rahaman S.K.Z;Chen F.-M;Wei J.-H;Tzeng P.-J;Sheu S.-S;Lo W.-C;Chang S.-C;Wu C.-I.; Kuo Y.-C; CHIH-I WU et al. |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory
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Chen, K.-T.; Lo, C.; Lin, Y.-Y.; Chueh, C.-Y.; Chang, C.; Siang, G.-Y.; Tseng, Y.-J.; Yang, Y.-J.; Hsieh, F.-C.; Chang, S.-H.; Liang, H.; Chiang, S.-H.; Liu, J.-H.; Lin, Y.-D.; Yeh, P.-C.; Wang, C.-Y.; Yang, H.-Y.; Tzeng, P.-J.; Liao, M.-H.; Chang, S.T.; Tseng, Y.-Y.; Lee, M.H.; MING-HAN LIAO; Chen, K.-T. et al. |
| 臺大學術典藏 |
2018-09-10T04:55:27Z |
Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers
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Tzeng, P.J.;Maikap, S.;Lai, W.Z.;Liang, C.S.;Chen, P.S.;Lee, L.S.;Liu, C.W.; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:10:30Z |
Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device
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Tsai, Ping-Hung; Chang-Liao, Kuei-Shu; Yang, Dong-Wei; Chung, Yuan-Bin; Wang, Tien-Ko; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Tsai, M. J.; Chin, Albert |
| 國立臺灣大學 |
2010 |
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
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Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; Tsai, M.-J. |
| 國立臺灣大學 |
2007 |
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers
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Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. |
| 國立臺灣大學 |
2007 |
Charge storage characteristics of atomic layer deposited RuOx nanocrystals
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Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
| 國立臺灣大學 |
2007 |
HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications
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Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. |
Showing items 1-10 of 10 (1 Page(s) Totally)
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