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显示项目 41-50 / 81 (共9页)
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机构 日期 题名 作者
臺大學術典藏 2020-10-07T01:23:13Z Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2020-10-07T01:23:13Z Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2020-10-07T01:23:13Z Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2020-10-07T01:23:12Z Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏 2020-10-07T01:23:12Z Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏 2020-10-07T01:23:11Z Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020-10-07T01:23:11Z Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020-10-07T01:23:11Z Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020 Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏 2020 Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin

显示项目 41-50 / 81 (共9页)
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