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Institution	Date	Title	Author
國立高雄師範大學	2011-11	Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing	Y.L. Yang;Y.P. Huang;P.T. Chen;W.Q. Zhang;C.Y. Cheng;L.K. Chin;C.W. Hsu;W.K. Yeh; 楊宜霖

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