English  |  正體中文  |  简体中文  |  0  
???header.visitor??? :  53091926    ???header.onlineuser??? :  885
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

"wang c i"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 1-25 of 31  (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page

Institution Date Title Author
國立成功大學 2023 MFI2 upregulation promotes malignant progression through EGF/FAK signaling in oral cavity squamous cell carcinoma Yen, W.-C.;Chang, K.-P.;Chen, Chen C.-Y.;Huang, Y.;Chen, T.-W.;Cheng, H.-W.;Yi, J.-S.;Cheng, Cheng C.-C.;Wu, C.-C.;Wang, C.-I.
臺大學術典藏 2022-03-22T08:30:48Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:46Z Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:45Z Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:44Z Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:43Z Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:38Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:30:36Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:44Z Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:43Z Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:37Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2021-09-02T00:03:42Z Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; CHAO-HSIN WU
臺大學術典藏 2021-08-05T02:41:02Z High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2021-08-05T02:41:02Z Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2021-08-05T02:41:01Z Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2 Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2021-08-05T02:41:01Z Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2021-08-05T02:40:55Z High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2021-08-05T02:40:55Z Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2 Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2021-08-05T02:37:49Z Low-Cost Hole-Transporting Materials Based on Carbohelicene for High-Performance Perovskite Solar Cells Lin Y.-S;Abate S.Y;Wang C.-I;Wen Y.-S;Chen C.-I;Hsu C.-P;Chueh C.-C;Tao Y.-T;Sun S.-S.; Lin Y.-S; Abate S.Y; Wang C.-I; Wen Y.-S; Chen C.-I; Hsu C.-P; Chueh C.-C; Tao Y.-T; Sun S.-S.; CHU-CHEN CHUEH
臺大學術典藏 2021-02-04T02:27:47Z Dielectric properties and reliability enhancement of atomic layer deposited thin films by: In situ atomic layer substrate biasing Chou, C.-Y.;Chang, T.-J.;Wang, C.-I.;Wang, C.-Y.;Yin, Y.-T.;Chung, T.-F.;Yang, J.-R.;Lin, H.-C.;Chen, M.-J.; Chou, C.-Y.; Chang, T.-J.; Wang, C.-I.; Wang, C.-Y.; Yin, Y.-T.; Chung, T.-F.; Yang, J.-R.; Lin, H.-C.; Chen, M.-J.; JER-REN YANG; HSIN-CHIH LIN; MIIN-JANG CHEN
國立成功大學 2021 Characterization of recurrent relevant genes reveals a novel role of rpl36a in radioresistant oral squamous cell carcinoma Chen, T.-W.;Chang, K.-P.;Cheng, Cheng C.-C.;Chen, Chen C.-Y.;Hong, S.-W.;Sie, Z.-L.;Cheng, H.-W.;Yen, W.-C.;Huang, Y.;Liu, S.-C.;Wang, C.-I.
臺大學術典藏 2020-05-12T02:52:12Z Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices MIIN-JANG CHEN;Chen, M.-J.;Lin, H.-C.;Shyue, J.-J.;Yin, Y.-T.;Wang, C.-Y.;Chang, T.-J.;Wang, C.-I.; Wang, C.-I.; Chang, T.-J.; Wang, C.-Y.; Yin, Y.-T.; Shyue, J.-J.; Lin, H.-C.; Chen, M.-J.; MIIN-JANG CHEN
臺大學術典藏 2018-09-10T14:59:41Z Sensitive and selective DNA probe based on "turn-on" photoluminescence of C-dots@RGO Wang, C.-I.; Wu, W.-C.; Periasamy, A.P.; Chang, H.-T.; HUAN-TSUNG CHANG

Showing items 1-25 of 31  (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page