| 國立成功大學 |
2023 |
MFI2 upregulation promotes malignant progression through EGF/FAK signaling in oral cavity squamous cell carcinoma
|
Yen, W.-C.;Chang, K.-P.;Chen, Chen C.-Y.;Huang, Y.;Chen, T.-W.;Cheng, H.-W.;Yi, J.-S.;Cheng, Cheng C.-C.;Wu, C.-C.;Wang, C.-I. |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
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Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
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Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
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Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-09-02T00:03:42Z |
Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks
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Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; CHAO-HSIN WU |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
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Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
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Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2
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Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks
|
Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:40:55Z |
High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
|
Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-08-05T02:40:55Z |
Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2
|
Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-08-05T02:37:49Z |
Low-Cost Hole-Transporting Materials Based on Carbohelicene for High-Performance Perovskite Solar Cells
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Lin Y.-S;Abate S.Y;Wang C.-I;Wen Y.-S;Chen C.-I;Hsu C.-P;Chueh C.-C;Tao Y.-T;Sun S.-S.; Lin Y.-S; Abate S.Y; Wang C.-I; Wen Y.-S; Chen C.-I; Hsu C.-P; Chueh C.-C; Tao Y.-T; Sun S.-S.; CHU-CHEN CHUEH |
| 臺大學術典藏 |
2021-02-04T02:27:47Z |
Dielectric properties and reliability enhancement of atomic layer deposited thin films by: In situ atomic layer substrate biasing
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Chou, C.-Y.;Chang, T.-J.;Wang, C.-I.;Wang, C.-Y.;Yin, Y.-T.;Chung, T.-F.;Yang, J.-R.;Lin, H.-C.;Chen, M.-J.; Chou, C.-Y.; Chang, T.-J.; Wang, C.-I.; Wang, C.-Y.; Yin, Y.-T.; Chung, T.-F.; Yang, J.-R.; Lin, H.-C.; Chen, M.-J.; JER-REN YANG; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 國立成功大學 |
2021 |
Characterization of recurrent relevant genes reveals a novel role of rpl36a in radioresistant oral squamous cell carcinoma
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Chen, T.-W.;Chang, K.-P.;Cheng, Cheng C.-C.;Chen, Chen C.-Y.;Hong, S.-W.;Sie, Z.-L.;Cheng, H.-W.;Yen, W.-C.;Huang, Y.;Liu, S.-C.;Wang, C.-I. |
| 臺大學術典藏 |
2020-05-12T02:52:12Z |
Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
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MIIN-JANG CHEN;Chen, M.-J.;Lin, H.-C.;Shyue, J.-J.;Yin, Y.-T.;Wang, C.-Y.;Chang, T.-J.;Wang, C.-I.; Wang, C.-I.; Chang, T.-J.; Wang, C.-Y.; Yin, Y.-T.; Shyue, J.-J.; Lin, H.-C.; Chen, M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2018-09-10T14:59:41Z |
Sensitive and selective DNA probe based on "turn-on" photoluminescence of C-dots@RGO
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Wang, C.-I.; Wu, W.-C.; Periasamy, A.P.; Chang, H.-T.; HUAN-TSUNG CHANG |
