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Showing items 1-10 of 31 (4 Page(s) Totally)
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| 國立成功大學 |
2023 |
MFI2 upregulation promotes malignant progression through EGF/FAK signaling in oral cavity squamous cell carcinoma
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Yen, W.-C.;Chang, K.-P.;Chen, Chen C.-Y.;Huang, Y.;Chen, T.-W.;Cheng, H.-W.;Yi, J.-S.;Cheng, Cheng C.-C.;Wu, C.-C.;Wang, C.-I. |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
Showing items 1-10 of 31 (4 Page(s) Totally)
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