臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 11-20 of 31 (4 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2022-03-22T08:27:44Z	Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm	Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:43Z	Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography	Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:37Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏	2021-09-02T00:03:42Z	Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks	Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; CHAO-HSIN WU
臺大學術典藏	2021-08-05T02:41:02Z	High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment	Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:02Z	Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks	Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:01Z	Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2	Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:01Z	Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks	Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:40:55Z	High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment	Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏	2021-08-05T02:40:55Z	Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2	Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN

Showing items 11-20 of 31 (4 Page(s) Totally)
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