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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
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Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layers
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Tsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen |
| 國立交通大學 |
2014-12-12T01:46:21Z |
以氧化鋯製備雙層結構電阻式記憶體於單極性電阻轉態特性之研究
|
吳家瑋; Wu, Jia-Woei; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:18Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer
|
Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Unipolar Resistive Switching in ZrO2 Thin Films
|
Zhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
Showing items 1-5 of 5 (1 Page(s) Totally)
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