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Taiwan Academic Institutional Repository >
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"wu jw"
Showing items 11-20 of 39 (4 Page(s) Totally) << < 1 2 3 4 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
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CHANG, EY; CHEN, JS; WU, JW; LIN, KC |
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
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WU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Hot carrier degradation in LDMOS power transistors
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Cheng, CC; Wu, JW; Lee, CC; Shao, JH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:04:04Z |
PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
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CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:58Z |
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
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CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW |
| 國立交通大學 |
2014-12-08T15:03:56Z |
CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS |
| 國立交通大學 |
2014-12-08T15:03:41Z |
PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
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CHANG, EY; LIN, KC; WU, JW; CHEN, TH; CHEN, JS; WANG, SP |
| 國立交通大學 |
2014-12-08T15:03:32Z |
THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER
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WU, JW; CHANG, CY; LIN, KC; CHANG, EY; CHEN, JS; LEE, CT |
Showing items 11-20 of 39 (4 Page(s) Totally) << < 1 2 3 4 > >> View [10|25|50] records per page
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