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"wu jw"的相关文件
显示项目 6-15 / 39 (共4页)
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| 國立交通大學 |
2014-12-08T15:46:31Z |
Thermal conductivity of polyurethane foams
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Wu, JW; Sung, WF; Chu, HS |
| 國立交通大學 |
2014-12-08T15:42:03Z |
High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems
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Chen, SH; Chang, L; Chang, EY; Wu, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T |
| 國立交通大學 |
2014-12-08T15:27:51Z |
REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
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WU, JW; CHANG, CY; LIN, KC; CHANG, EY; HWANG, JH |
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS
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CHANG, EY; CHEN, JS; WU, JW; LIN, KC |
| 國立交通大學 |
2014-12-08T15:27:49Z |
THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
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WU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Hot carrier degradation in LDMOS power transistors
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Cheng, CC; Wu, JW; Lee, CC; Shao, JH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
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