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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:55Z |
The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors
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Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:46:29Z |
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
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Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:23:28Z |
Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
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Lin, Wei-Hsun; Lin, Meng-Yu; Wu, Shung-Yi; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
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Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:07:10Z |
Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
|
Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn |
Showing items 1-5 of 5 (1 Page(s) Totally)
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