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| 國立交通大學 |
2019-04-02T05:59:55Z |
Deposition of indium tin oxide films on polycarbonate substrates by radio-frequency magnetron sputtering
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Wu, WF; Chiou, BS |
| 國立交通大學 |
2019-04-02T05:58:32Z |
Properties of radio frequency magnetron sputtered silicon dioxide films
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Wu, WF; Chiou, BS |
| 國立臺灣海洋大學 |
2016 |
Boosted photocatalytic efficiency through plasmonic field confinement with bowtie and diabolo nanostructures under LED irradiation
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Lee CH;Liao SC;Lin TR;Wang SH;Lai DY;Chiu PK;Lee JW;Wu WF |
| 國立交通大學 |
2014-12-08T15:46:25Z |
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
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Wu, WF; Lin, CC; Huang, CC; Lin, HC; Chang, TC; Yang, RP; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:33Z |
Effect of aluminum seed layer on the crystallographic texture and electromigration resistance of physical vapor deposited copper interconnect
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Chin, YL; Chiou, BS; Wu, WF |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
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Yang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:26Z |
Effect of the tantalum barrier layer on the electromigration and stress migration resistance of physical-vapor-deposited copper interconnect
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Chin, YL; Chiou, BS; Wu, WF |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
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Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
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Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
Showing items 1-10 of 38 (4 Page(s) Totally)
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