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"wu y h"的相關文件
顯示項目 371-380 / 459 (共46頁) << < 33 34 35 36 37 38 39 40 41 42 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:38:16Z |
Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix
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Lin, T. C.; Wu, Y. H.; Li, L. C.; Sung, Y. T.; Lin, S. D.; Chang, L.; Suen, Y. W.; Lee, C. P. |
| 國立交通大學 |
2014-12-08T15:37:38Z |
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
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Chiang, C. H.; Chen, K. M.; Wu, Y. H.; Yeh, Y. S.; Lee, W. I.; Chen, J. F.; Lin, K. L.; Hsiao, Y. L.; Huang, W. C.; Chang, E. Y. |
| 國立交通大學 |
2014-12-08T15:36:35Z |
COL11A1 promotes tumor progression and predicts poor clinical outcome in ovarian cancer
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Wu, Y-H; Chang, T-H; Huang, Y-F; Huang, H-D; Chou, C-Y |
| 國立交通大學 |
2014-12-08T15:33:16Z |
Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field Mobility
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Chin, Albert; Chen, W. B.; Chen, P. C.; Wu, Y. H.; Chi, C. C.; Lee, Y. J.; Chang-Liao, K. S.; Kuan, C. H. |
| 國立交通大學 |
2014-12-08T15:28:03Z |
Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony
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Chiang, C. H.; Wu, Y. H.; Hsieh, M. C.; Yang, C. H.; Wang, J. F.; Chen, Ross C. C.; Chang, L.; Chen, J. F. |
| 國立交通大學 |
2014-12-08T15:27:27Z |
1 fF ESD protection device for gigahertz high-frequency output ESD protection
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Lee, J-H.; Huang, S-C.; Wu, Y. -H.; Chen, K. -H. |
| 國立交通大學 |
2014-12-08T15:23:32Z |
Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
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Cheng, C. H.; Chen, P. C.; Wu, Y. H.; Wu, M. J.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:21:34Z |
How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
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Chen, J. F.; Lin, Y. C.; Chiang, C. H.; Chen, Ross C. C.; Chen, Y. F.; Wu, Y. H.; Chang, L. |
| 國立交通大學 |
2014-12-08T15:21:00Z |
Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layer
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Cheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:16:25Z |
Strain relaxation and induced defects in InAsSb self-assembled quantum dots
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Chen, J. F.; Hsiao, R. S.; Huang, W. D.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, J. Y. |
顯示項目 371-380 / 459 (共46頁) << < 33 34 35 36 37 38 39 40 41 42 > >> 每頁顯示[10|25|50]項目
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