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機構	日期	題名	作者
國立臺灣大學	1994	Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Serological Responses of Patients with Nasopharyngeal Carcinoma to an N-Terminal Epstein-Barr Virus DNA Polymerase Expressed in Procaryotic Cells	Liu, M. Y.; Wu, Y. L.; Chen, L. S.; 陳振陽; Yang, C. S.; Liu, M. Y.; Wu, Y. L.; Chen, L. S.; Chen, Jan-Yang; Yang, C. S.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1993	Right Pulmonary Artery Arising from Ascending Aorta:Report of a Successfully Treated Case	邱英世; Siy, L. L; Chen, M. R.; Lee, B. S.; Chiu, C. B.; Wu, Y. L.; Chiu, Ing-Sh; Siy, L. L; Chen, M. R.; Lee, B. S.; Chiu, C. B.; Wu, Y. L.
國立臺灣大學	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學	1993	Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
臺大學術典藏	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo
臺大學術典藏	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1963	Spectrophotometric Study of the Complexes of Ge, Zr and Hf with Gallein	Pan, K.; 林聖賢; Wu, Y. L.; Chen, Y. M.; Pan, K.; Lin, Sheng-Hsien; Wu, Y. L.; Chen, Y. M.

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