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| 國立交通大學 |
2019-04-02T06:04:38Z |
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction
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Zhou, Keji; Xue, Xiaoyong; Yang, Jianguo; Xu, Xiaoxin; Lv, Hangbing; Wang, Mingyu; Jing, Ming'e; Liu, Wenjun; Zeng, Xiaoyang; Chung, Steve S.; Li, Jing; Liu, Ming |
| 國立交通大學 |
2017-04-21T06:50:15Z |
Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm Scaling
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Xu, Xiaoxin; Luo, Qing; Gong, Tiancheng; Lv, Hangbing; Long, Shibing; Liu, Qi; Chung, Steve S.; Li, Jing; Liu, Ming |
| 國立交通大學 |
2017-04-21T06:48:32Z |
Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells
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Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Chung, Steve S.; Li, Jing; Liu, Ming |
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