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| 國立交通大學 |
2020-10-05T02:01:07Z |
Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
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Lin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M. |
| 國立交通大學 |
2020-02-02T23:54:28Z |
A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
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Lin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
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Zheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:09:52Z |
The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode
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Lin, Shih-Kai; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Chang, Jing-Shuen; Wu, Cheng-Hsien; Tseng, Yi-Ting; Xu, You-Lin; Huang, Kai-Lin; Sun, Li-Chuan; Zhang, Yong-Ci; Chiu, Yu-Ju; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
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Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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