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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 36-60 of 86  (4 Page(s) Totally)
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Institution Date Title Author
南台科技大學 2002-12 Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲
國立臺灣海洋大學 2002-12 Optimizing Indium Tin Oxide Thin Films with Bipolar dc-pulsed Magnetron Sputtering for electrochromic Device Applications W. J. Lee; Y. K. Fang; J.-J. Ho; C.-Y. Chen; S.-F. Chen; R.-Y. Tsai; D. Huang; F. C. Ho
南台科技大學 2002-10 Improving High Temperature Characteristic of SiGeC/Si Heterojunction Diode with Propane Carbon Source W. T. Hsieh; Y. K. Fang; S. F. Ting; Y. S. Tsair; W. J. Lee; H. P. Wang;謝文哲
國立臺灣海洋大學 2002-08-07 A High Breakdown-Voltage SiCNSi Heterojunction Diode for High-Temperature Applications S.F. Ting; Y.K. Fang; W.T. Hsieh; Y.S. Tsair; C.N. Chang; C.S. Lin; M.C. Hsieh; H.C. Chiang; J.J. Ho
南台科技大學 2002-05 Downscaling limit of equivalent oxide thickness in formation ofultrathin gate dielectric by thermal-enhanced remote plasma nitridation C. H. Chen; Y. K. Fang; S. F. Ting; W. T. Hsieh; C. W. Yang; T. H. Hsu; M. C. Yu; T. L. Lee; S. C. Chen; C. H. Yu; M. S. Liang;陳順智;謝文哲
南台科技大學 2002-03 A High Breakdown-Voltage SiCN/Si Heterojunction Diode for High-Temperature Applications S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲
南台科技大學 2002 Highly sensitive porous-SiC thin-film photodetectors for high-temperature applications 吳坤憲; Kuen-Hsien Wu; Yao-Chin Wang; Y. K. Fang
南台科技大學 2001-10 Originals and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides C. H. Chen; Y. K. Fang; W. T. Hsieh; S. F. Ting; M. C. Yu; M. F. Wang; C. L. Chen; L. G. Yao; S. C. Chen; C. H. Yu; M. S. Liang;陳順智;謝文哲
南台科技大學 2001-09 The Cubic Single-Crystalline Si1-x-yCxNy Films With Mirror Face Prepared By RTCVD S. F. Ting; Y. K. Fang; W. T. Hsieh; Y. S. Tsair; C. N. Chang; C. S. Lin; M. C. Hsieh; H. C. Chiang; J. J. Ho;謝文哲
南台科技大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0. 13mm CMOS Technology and Beyond S. F. Ting; Y. K. Fang; C. H. Chen; C. W. Yang; W. T. Hsieh; J. J. Ho; M. C. Yu; S. M. Jang; C. H. Yu; M. S. Liang; S. Chen; R. Shih;謝文哲
國立臺灣海洋大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0.13 m CMOS Technology and Beyond S.F. Ting; Y.K. Fang; C.H. Chen; C.W. Yang; W.T. Hsieh; J.J. Ho; M.C. Yu; S.M. Jang; C.H. Yu; M.S. Liang; S. Chen; R. Shih
國立臺灣海洋大學 2001-04 Using Porous Silicon As Semi-Insulating Substrate for a-SiC High Temperature Optical-Sensing Devices W.T. Hsieh; Y.K. Fang; K.H. Wu; W.J. Lee; J.J. Ho; C.W. Ho
國立臺灣海洋大學 2001-03 A Contact Type Piezoresistive Micro-shear Sensors for Above-knee Prosthesis Application M.C. Hsieh; Y.K. Fang; M.S. Ju; G.S. Chen; J.J. Ho; C.H. Yang; B.M. Wu; C.S. Wu; Y.F. Chen
南台科技大學 2001-02 Using Porous Silicon As Semi-Insulating Subsrate for β-SiC High Temperature Optical-Sensing Devices W. T. Hsieh; Y. K. Fang; K. H. Wu; W. J. Lee; J. J. Ho; C. W. Ho;謝文哲
南台科技大學 2001 Using porous silicon as semi-insulating substrate for β-SiChigh temperature optical-sensing devices 吳坤憲; W. T. Hsieh; Y. K. Fang; K. H. Wu; W. J. lee; J. J. Ho; C. W. Ho
國立臺灣海洋大學 2000-12 Novel Electrochromic Device (ECD) of Tungsten Oxide (WO3) Thin Film Integrated with -SiGe Photodetector for Hydrogen Sensor K.H. Lee; Y.K. Fang; W.J. Lee; J.J. Ho; K.H. Chen; K.C. Liao
國立臺灣海洋大學 2000-10-26 To Suppress Dark Current of High Temperature -SiC/Si Optoelectronic Devices with Porous Silicon W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
國立臺灣海洋大學 2000-05 An a-SiGeH Phototransistor Integrated a Pd Film on Glass Substrate for Hydrogen Monitoring W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
國立臺灣海洋大學 2000-05 An a-SiGeH Phototransistor Integrated a Pd Film on Glass Substrate for Hydrogen Monitoring W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
南台科技大學 2000-02 Effects of Surface Porosity on Tungsten Trioxide(WO3) Films’ Electrochromic Performance W. J. Lee; Y. K. Fang; J. J. Ho; W. T. Hsieh; S. F. Ting; Daoyang Huang; Fang C. Ho;謝文哲
國立臺灣海洋大學 2000-02 Effects of Surface Porosity on Tungsten Trioxide (WO3) Films’Electrochromic Performance W. J. Lee; Y. K. Fang; Jyh-Jier Ho; W. T. Hsieh; S. F. Ting; Daoyang Huang; Fang C. Ho
國立臺灣海洋大學 2000-01-06 Improvement of beta-SiC/Si pn Diode High Temperature Characteristics with Porous Silicon Layer W.T. Hsieh; Y.K. Fang; W.J. Lee; C.W. Ho; K.H. Wu; J.J. Ho; J.D. Hwang
南台科技大學 2000-01 Improvement of β-SiC / Si pn diode high temperature characteristics with porous silicon laye W. T. Hsieh; Y. K. Fang; W. J Lee; C. W. Ho; K. H. Wu; J. J. Ho; J. D. Hwang;謝文哲
南台科技大學 2000 To suppress dark current of high temperature β-SiC/Sioptoelectronic devices with porous silicon substrate 吳坤憲; W. T. Hsieh; Y. K. Fang; W. J. Lee; C. W. Ho; K. H. Wu
南台科技大學 2000 Improvement of β-SiC/Si pn diode high temperature characteristics with porous silicon layer 吳坤憲; W. T. Hsieh; Y. K. Fang; W. J. Lee; C. W. Ho; K. H. Wu; J. J. Ho; J. D. Hwang

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